Abstract: Silicon-based solar cell manufacturing via plasma enhanced chemical vapor deposition (PECVD) of both active/passive layers is investigated. In addition, in-situ plasma diagnostics of the deposition process can be monitored in real-time.

以上3 层pecvd 部分是决定a-si:h tft 的迁 移率的关键步骤, 采用PECVD 工艺, 主要材料为工 艺气体硅烷(SiH 4 )、磷烷(PH 3 )、氨气(NH 3 )、笑气

2014年1月1日 · This paper reports a fully automated plasma-enhanced plasma chemical vapor deposition (PECVD) system for thin-film deposition. This system can be used for the deposition of hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon for devices like solar cells or optical sensors with good film homogeneity and material properties ...

2018年10月31日 · In this study, the process of hydrogenated amorphous silicon (a-Si:H) thin films is prepared by plasma enhanced chemical vapor deposition (PECVD) in conjunction with the in situ plasma diagnostic tool of optical emission spectrometer (OES).

In this work the effect of PECVD a-Si growth temperature on the performance of a-Si/c-Si solar cells is studied. Phosphorus doped amorphous silicon was deposited using PECVD at three different temperatures: 150 °C, 200 °C, and 250 °C. A thin film ALD deposited ZnO is used as the anti-reflective coating.

2023年6月23日 · The surface passivation of crystalline silicon (c-Si) is studied during growth of hydrogenated amorphous silicon (a-Si:H) by means of plasma-enhanced chemical vapor deposition (PECVD). The surface passivation is characterized by an in-situ method of the photocurrent measurement of c-Si during the growth of an a-Si:H passivation layer at various ...

2018年3月19日 · The effect of neutral transport on the deposition rate profiles of thin films formed by plasma-enhanced chemical vapor deposition (PECVD) is investigated to improve the uniformity of amorphous hydrogenated silicon films.

2015年3月7日 · 影响非晶硅沉积的因素很多，通过研究发现，在RF—PECVD中：提高硅烷浓度、沉积功率和沉积温度都能提高a．sj：H的沉积速率，最高沉积速率可达O39n耐s。

2023年3月14日 · In this paper, we study the surface passivation of c-Si during the growth of an a-Si:H passivation layer. To do that, the in situ photocurrent in c-Si is measured throughout the growth of a-Si:H by PECVD.

2006年6月6日 · Fourier transform infra-red (FTIR) spectra of the PECVD and HWCVD samples exhibit strong absorption peaks that correspond to Si–H bend and stretch modes, and Si–H 2 stretch modes.