The BLF578 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 40 mA; PL = 1200 W pulsed; f = …

A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.

BLF578,112 – RF Mosfet 50 V 40 mA 225MHz 24dB 1200W SOT539A from Ampleon USA Inc.. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. This device is sensitive to ElectroStatic Discharge (ESD). …

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon's …

Part #: BLF578. Download. File Size: 114Kbytes. Page: 14 Pages. Description: Power LDMOS transistor. Manufacturer: NXP Semiconductors.

1200 W LDMOS功率晶体管，用于HF至500 MHz波段的广播应用和工业应用。

View datasheets for BLF578 by Ampleon USA Inc. and other related components here.

在 DigiKey 查看 Ampleon USA Inc. 提供的 BLF578 规格书上的技术规格、尺寸等信息。

立创商城提供（Ampleon(安谱隆)）的（场效应管(MOSFET)）BLF578,112中文资料,PDF数据手册,引脚图,封装规格,价格行情和库存等信息，采购BLF578,112上立创商城。