COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS. DESCRIPTION The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP …

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

Description: DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS. Manufacturer: ON Semiconductor.

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The B DX 33B and BDX 33C are silicon. Epitaxial-Base NPN power transistors in. monolithic Darlington configuration mounted in. Jedec TO-220 plas t ic pac kage. They ar e int ented. for use in power linear and s wit c hing applications. The complementary PNP types are BDX 34 B and.

Description: isc Silicon PNP Power Transistor. Manufacturer: Inchange Semiconductor Company Limited.

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX66/A/B/C DESCRIPTION Collector Current -IC= -16A High DC Current Gain-hFE= 1000(Min)@ IC= -10A Complement to Type BDX67/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta ...

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