2018年5月11日 · The structure and growth of ultrathin Bi (110) islands were investigated on a Si (111) substrate by scanning tunneling microscopy and scanning tunneling spectroscopy (STS). Both even- and odd-layer-height islands nucleated on a one-monolayer-thick wetting layer.

2015年2月26日 · We studied the structure of ultrathin Bi (110) films on substrates using scanning tunneling microscopy. Atomically flat Bi islands were nucleated on the substrates at room temperature. The edges of these islands were parallel to the short side of …

2012年12月11日 · In contrast with the semimetal property of elemental bismuth, an energy gap of 0.4 eV is measured at the centre of the Bi (110) nanoribbons. Edge reconstructions, which can facilitate the edge strain energy release, are found to be responsible for the band gap opening.

2018年7月1日 · Ultrathin Bi(110) films were grown in MBE and transferred under an ultra-high vacuum (UHV) condition to angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM) systems for measurements. The single crystal BP substrates were cleaved in UHV to obtain fresh surfaces.

Our results demonstrate that while the electronic and topological properties of 1-BL films greatly depend on the stacking modes between the Bi(110) bilayer and the adlayer, the 2-BL films show well-decoupled electronic properties from the Cu substrate and nontrivial topologies robust against surface atomic buckling height benefitting from the in...

2023年8月29日 · However, scanning tunneling microscopy/spectroscopy (STM/STS) showed that the electronic structures of the grown Bi(110) were categorized into two distinct phases depending on the coverage of Bi. When the coverage was less than ≈64 ± 2%, an anomalous large energy gap (E g) of 0.8–1.0 eV emerged in Bi(110) nanoribbon thin films. However ...

2023年3月30日 · Wang et al. investigate the topological properties of BP-like Bi(110) ultrathin films on Cu(111) by STM/STS measurements and DFT calculations. The results show that the topological properties of 1-BL Bi(110) can be tuned by stacking modes, which leads to a large difference in the atomic buckling [26] .

2014年12月12日 · Here, combining first-principles calculations and scanning tunneling microscopy/spectroscopy (STM/STS) experimental studies, we report nontrivial 2D TI phases in 2-monolayer (2-ML) and 4-ML Bi(110) films with large and tunable bandgaps determined by atomic buckling of Bi(110) films.

Download scientific diagram | (a) Typical STM image of Bi(110) island. (b) Close-up STM image showing the reconstruction at the edge. (c) Line profiles along the edge (blue solid line) in panel...

This study chiefly uses Scanning Tunneling Microscopy (STM), Scanning Tunneling Spectroscopy (STS) and Non Contact Atomic Force Microscope (NCAFM) to investigate the geometric and electronic structure of Bi(110) islands on highly oriented pyrolytic graphite (HOPG) substrate.