2004年10月18日 · Monolithic borophosphosilicate glasses (BPSG) were prepared by the sol-gel route through xerogel densification. Tetramethoxysilane (Si (OCH 3) 4), trimethylborate (B (OCH 3) 3), and trimethylphosphite (P (OCH 3) 3) were used as …

Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and refractive index and stress measurements were employed to characterize BPSG films.

2008年1月8日 · Borophosphosilicate glassy (BPSG) films, used as a premetal dielectric in metal-oxide-semiconductor field-effect transistor devices, can be a serious constraint in the device technology due to the nucleation and growth of boron-phosphate phase , especially in BPSG films grown with a high boron-to-phosphorous ratio.

2008年3月14日 · Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and refractive index and stress measurements were employed to characterize BPSG films. The effects of input radio-frequency (RF) power and precursor (TEB and TMPI) flow rate on deposition rate were studied.

Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and refractive index and stress measurements were employed to characterize BPSG films.

bpsg制备方法-工艺参数优化需兼顾薄膜应力与介电性能。采用椭圆偏振仪实时监测薄膜厚度与折射率，确保误差小于±3%。四探针法可检测薄膜电阻率，评估掺杂均匀性。对于关键制程节点，需通过X射线光电子能谱（XPS）分析硼、磷的化学态，确认其以B-O和P-O键形式稳定存在于玻璃网络中。制备过程 ...

2007年6月17日 · 采用常压等离子体增强化学气相沉积AP-PECVD工艺在硅片上生长硼磷硅酸盐玻璃 (BPSG)。 根据XPS和FT-IR结果，对三种前驱体 (四乙氧基硅烷、磷酸三乙酯和硼酸三乙酯)的组成分数进行优化。

Deposition of BPSG films as dielectrics is a critical step in semiconductor device manufacturing. Accurate control of concentration depth profile of Boron and P

2003年12月1日 · Monolithic borophosphosilicate glasses (BPSG) were prepared by the sol-gel route through xerogel densification. Tetramethoxysilane (Si (OCH3)4), trimethylborate (B (OCH3)3), and...

2003年1月1日 · 通过 X 射线光电子能谱 (XPS) 分析阐明了掺杂剂硼和磷在已应用于热电元件的连接硅锗半导体中的 pn 结的渗透行为。 pn 连接盘样品由 Si、Ge 和 B（p 型半导体的原子比为 79.7:20.1:0.21）和 Si、Ge 和 P（n 型为 79.8:20.00:0.18）粉末之一制备通过脉冲电流烧结工艺在 …