此模型模拟 GaN 基发光二极管器件，计算了发射强度、光谱和效率随驱动电流变化的情况，模拟了带隙的直接辐射复合，以及非辐射俄歇复合和陷阱辅助复合过程。

氮化镓（GaN）是一种重要的直接带隙半导体材料，适用于光电子、高功率和高频应用。Chuang 和 Chang 在 1996 年发表了他们对包括 GaN 在内的纤锌矿晶体的 6×6 阶哈密顿矩阵的推导和计算方法（参考文献1）。在文献的方程（45）中，对 6×6 阶哈密顿矩阵进行块对角化 ...

This model simulates a GaN based light emitting diode. The emission intensity, spectrum, and quantum efficiency are calculated as a function of the driving current. Direct radiative recombination across the band gap is modeled, as well as non-radiative Auger and trap-assisted recombination processes.

Gallium Nitride (GaN) is a very interesting and highly promising material system for both optical and microwave high-power electronic applications. It plays a crucial role today in the most promising technology for high power, high-frequency circuits: AlGaN/GaN HEMTs.

GaN HEMTs differing by substrate material and heat removal strategy are simulated and compared in order to choose a proper substrate for proper thermal management.

5 天之前 · 学习基于 COMSOL with Matlab的弹性波超材料数据集批量自动生成方法（分享课程涉及的所有数据集及代码） 5. 学习基于深度学习的弹性波超材料正向预测、参数设计与拓扑设计的原理以及实现方式（分享课程涉及的所有代码）

This model simulates a GaN-based light emitting diode (LED). It demonstrates how the Semiconductor interface can be used to evaluate optical emission from electrically driven optoelectronic devices using the Optical Transition feature. It also gives an example of how

AlGaN/GaN heterostructures are unique because the 2DEG at the interface is created by the difference in polarization properties of the AlGaN and the GaN layers; not due to intentional doping. In this work, a 3D model of an electrostatically actuated micro cantilever has been developed using COMSOL for characterization using the finite element ...

In this research work, we designed and discussed a structure of high electron mobility transistor based on Gallium Nitride HEMT GaN size. To achieve this, we have designed an original two-dimensional architecture composed of COMSOL Multi-physics software.

2016年7月1日 · In this paper we have designed the GaN/AlGaN HEMT in Comsol tool and obtained the simulation results of the same structure. The Simulation results including the meshing part of GaN HEMT, two...