Transene Chromium Etchants 1020 and 1020AC are high purity ceric ammonium nitrate systems for precise, clean etching of chromium and chromium oxide films. Chromium Etchant 1020AC is nitric-acid free and exhibits a slower etch rate. Both etchants are compatible with positive and negative photoresists.

Our chromium etchant is high purity ceric ammonium nitrate system for precise, clean etching of chromium and chromium oxide films. Compatible with positive and negative photoresists. Our chromium etchant is filtered to remove all particulates above 0.2 microns.

Cr-etch-210 is an alkaline etchant for Cr. The etchant is used for the wet-chemical patterning or removal of thin Cr layers with selectivity to metals like Au, Sn, Pt, Cu, Ni, Ti, Ta.

铬蚀刻剂是铬基溶液，可从底物移除多余金属。 这些蚀刻剂主要用于金属表面处理和电子工业。 蚀刻速率为4 mm/s，可用于蚀刻镍、铜和铬基多余金属。 [1] [2] [3] [4] 用于室温或高温条件。 蚀刻干净，省去中间清洗环节。 蚀刻温度随膜的厚度而改变。 室温下蚀刻时间在 15 到 60 秒之间。 注意，应在通风良好的通风橱内处理铬蚀刻剂。 该产品可蚀刻铝、铬、铜、镍、GaAs。 它能表面氧化硅、钽/TaN，但对Si 3 N 4, SiO 2, Ti, 和 W表面没有影响 [5] 设计用于铬和氧化铬薄膜的精 …

Cr etch 210 is an alkaline etchant for Cr. The etchant is used for the wet-chemical patterning or removal of thin Cr layers with selectivity to metals like Au, Sn, Pt, Cu, Ni, Ti, Ta.

2001年5月1日 · We investigated the etch characteristics of chromium films by using gas mixtures with electron cyclotron resonance plasma. In order to examine the chemical etch characteristics of gas plasma, we examined the etch rate with various gas mixing ratios.

TechniEtch Cr n:1 is based upon a mixture of perchloric acid (HClO4), and ceric ammonium nitrate (NH4)2[Ce(NO3)6]. Ceric ammonium nitrate itself is a very strong oxidizer. The following chemical equation summarizes the mechanism of chromium etching with per-chloric acid and ceric ammonium nitrate:

Transene Chromium Etchants 1020 and 1020AC are high purity ceric ammonium nitrate systems for precise, clean etching of chromium and chromium oxide films. Chromium Etchant 1020AC is nitric-acid free and exhibits a slower etch rate. Both etchants are compatible with positive and negative photoresists.

2021年4月7日 · Cr and CrO x etching is typically performed using chlorine–oxygen-based plasma chemistries, but the nanoscale imposes limitations. In this work, directional etching is demonstrated for the first time using fluorine–oxygen-based plasma.

铬蚀刻剂是铬基溶液，可从底物移除多余金属。 这些蚀刻剂主要用于金属表面处理和电子工业。 蚀刻速率为4 mm/s，可用于蚀刻镍、铜和铬基多余金属。 [1] [2] [3] [4] 用于室温或高温条件。 蚀刻干净，省去中间清洗环节。 蚀刻温度随膜的厚度而改变。 室温下蚀刻时间在 15 到 60 秒之间。 注意，应在通风良好的通风橱内处理铬蚀刻剂。 该产品可蚀刻铝、铬、铜、镍、GaAs。 它能表面氧化硅、钽/TaN，但对Si 3 N 4, SiO 2, Ti, 和 W表面没有影响 [5] 设计用于铬和氧化铬薄膜的精 …