2024年11月27日 · LOCOS（Local Oxidation of Silicon，硅的局部氧化）工艺是一种在芯片制造中用于实现晶体管之间隔离的技术。 其原理是在硅衬底上通过热氧化生长二氧化硅（SiO₂）来形成场氧层。 首先在硅片表面生长一层薄的氮化硅（Si₃N₄）作为掩蔽层，然后光刻出需要生长氧化层的区域，去除这些区域的氮化硅，接着在高温下进行热氧化，使暴露的硅区域生长出二氧化硅，实现隔离。 需要高压氧气才能做出比较深的氧化层作为阱。 例如，在 CMOS 工艺中，利用 …

2009年9月6日 · 通常制备SiO2薄膜现行方法主要有磁控溅射、离子束溅射、化学气相沉积 (CVD)、热氧化法、 凝胶- 溶胶法 等。 磁控溅射自1970年问世以来，由于其沉积速率快、衬底温度低、薄膜厚度的可控性、重复性及均匀性与其它SiO2薄膜制备方法相比有明显的改善和提高，避免粉尘污染，以及溅射阴极尺寸可以按比例扩大等优点，已应用于从微电子器件到数平方米玻璃镀膜的诸多领域，并逐渐发展成为大面积高速沉积的主流方法。 溅射的一般原理是将衬底承片台 …

Plasma Enhance Chemical Vapor Deposition of Silicon Dioxide (SiO 2) Document No: Revision: PlasmaLab 100 PECVD Author: Raj Patel, Meredith Metzler Page 1 1. Introduction This report documents the study of deposition characteristics and film properties of silicon dioxide (SiO 2

A、等离子淀积优点及方程式： 等离子增强CVD的突出优点是淀积温度低，最常用的温度 是300～350℃。 等离子体增强化学气相淀积氮化硅，常由 SiH4与氨在氩等离子气氛下或SiH4在氮等离子气氛下反应生 成，其反应式如下： SiH4 + NH3 →SixNyHz + 3H2 (4)6.28 H 7~15% (5) H 18~22% 2SiH4 + N2 → 2 SixNyHz + 3H2 等离子体薄膜含有大量的H，氢的总量占7% ~22% ,它以Si－ H或N－H形式存在。 硅、氮比在0.7~1.7之间 (4) ：H 7~15% 少 (5 ) H 18~22% 大量的H …

2001年1月1日 · Plasma enhanced CVD follows with a short overview of new techniques, including HDP (High Density Plasma), ECR (Electron Cyclotron Resonance) and photo enhanced deposition. After reviewing the basis for deposition for each of the technologies within their respective sections, current deposition methods are reviewed.

2021年7月1日 · In this study, we develop an amino silane precursor for high-temperature thermal atomic layer (chemical vapor) deposition (ALCVD) of SiO 2 to achieve high reactivity and thermal stability. Among the various available oxidants, ozone (O 3 ) was used as a highly reactive oxygen source due to the high stability of the precursor.

2024年5月30日 · In this study, focusing on the two important characteristics (surface morphology and deposition rate) of SiO 2 films for 3 D ICs manufacturing, SiO 2 film growth was systematically investigated via SiH 4 /Ar/N 2 O in PECVD; a theoretical reaction process model (including gas-phase reaction, chemical adsorption, and surface reaction) bridging the...

2014年7月1日 · In this paper we report on synthesis of thin films of silicon dioxide (SiO 2) using conventional plasma enhanced chemical vapor deposition (PE-CVD) from pure silane (SiH 4) and oxygen (O...

2016年2月22日 · We systematically investigated growth characteristics, chemical compositions, and electrical properties of PE-CVD SiO2 prepared under various deposition conditions. The SiO2 films prepared using PE-CVD showed high purity and good stoichiometry with a …

High-Density Plasma CVD of SiO2 None of the approaches we've so far examined for depositing silicon dioxide can simultaneously achieve good conformality and high film density at low deposition temperatures (400 °C). During the early 90's a film that met all those requirements became increasingly necessary for intermetal dielectric applications ...