2024年10月2日 · 如上图，STI（Shallow Trench Isolation）浅沟槽隔离，先在硅片上刻蚀浅沟槽，然后填充氧化硅，形成电气隔离层。 主要作用是将 CMOS 的nMOSFET和pMOSFET隔离开，防止相互干扰。 什么是LOCOS工艺？ 如上图，LOCOS（局部氧化硅），是一种早期的隔离技术。 在硅片表面进行局部氧化来形成氧化硅来隔离。 LOCOS 主要的 缺点是‘鸟嘴效应’，随着集成电路的尺寸越来越小，LOCOS工艺的“鸟嘴效应”导致器件之间的隔离区域变得太大，无法满足先进 …

Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between adjacent semiconductor device components. STI is generally used on CMOS process technology nodes of …

2023年3月25日 · Short-term Incentive (STI) can be defined as a bonus or an award given to employees at the end of each financial period, based on their performance during the said period. It is typically given to high-performing employees, however some organizations also offer an STI across all levels.

In the present work, a high aspect ratio process (HARP) using a new O 3 /TEOS based sub atmospheric chemical vapor deposition process was implemented as STI gapfill in sub-65-nm CMOS. Good gapfill performance up to aspect ratios greater than 10:1 was demonstrated.

2024年12月24日 · 随着 cmos工艺按比例缩小到90 nm以下,浅沟槽隔离( sti)引起的机械应力对 mosfet器件性能的影响 越来越严重。通过实验和 tcad仿真研究了 sti应力对一种 sonos结构的90 nm非易失存储器的影响。

Shallow trench isolation (STI) is rapidly replacing LOCOS (LOCal Oxidation of Silicon) as the device isolation process of choice. However, little work has been done to characterize the radiation-hardness capability of devices built with STI.

Shallow trench isolation (STI) is the predominant isolation technology for advanced integrated circuits. Dislocations are often found at STI after repeated thermal cycles. For STI integrity, it is insufficient to have excellent STI patterning fidelity and rounded corners; it is also critical to have minimal thermal mismatch during oxidation and ...

2010年3月26日 · Shallow trench isolation (STI) induced mechanical stress affects the device behavior in the advanced complementary metal oxide semiconductor (CMOS) technology. This article presents how to use an optimal STI process to reduce transistor mismatch and leakage current induced standby current in static random access memory (SRAM).

2024年6月10日 · “STI”指什么？英语缩写"STI"，全称为"Short Term Incentive"，直译为“短期激励”。这个术语在商业和会计领域中广泛使用，尤其在描述企业内部激励策略时。其拼音为"duǎn qī jī lì&qu

Sum of cash and near cash items and marketable securities: The total amount of money and other assets that a company can easily turn into money. Read more at Roic AI