2010年3月18日 · A new and simple method to directly synthesize stable and crystalline pure phase CeO 2 nanoparticles has been developed using cationic surfactant (cetyltrimethylammonium bromide, CTAB) and cerium chloride (CeCl 3) at room temperature.

2017年7月19日 · To understand the outcome of the photogenerated electron-hole pairs at room temperature, photoluminescence (PL) of pure-CeO 2 NPs, 1 mM and 3 mM CeO 2-Graphene nanostructures were performed...

2021年3月1日 · CeO 2 nanopolyhedra, nanorods, and nanocubes have been selectively synthesized by a hydrothermal process. Different dominant exposed facets: {111} and {100} for nanopolyhedra, {110} and {100} for nanorods, and {100} for nanocubes.

2009年5月15日 · The synthesized CeO 2 nanoparticles also exhibited room temperature photoluminescence (PL). The spectrum of the CeO 2 sample dispersed in methanol exhibits a broad-band character from 325 to 550 nm with four emission bands: a strong broad emission band at ∼406 nm (3.06 eV), a strong blue band at 420 nm (2.95 eV), blue-green band at …

The photoluminescence spectroscopy (PL) technique was used to investigate the presence of oxygen vacancies and intrinsic defects in the host CeO2 lattice...

ftir 光谱分析用于研究 ceo2 纳米棒中的化学键和分子振动。 采用 SEM 分析观察 CeO2 纳米棒的晶粒结构。 紫外-可见光谱确定了 CeO2 光吸收特性、带隙和 Urbach 能量。

仪测定样品的PL光谱,激发源为Xe灯. 薄膜样品. 分别为 10、20 和 25 nm. ( 4at.% ) 薄膜的原子力显微镜 ( AFM) 表面形貌图. 可以看出该薄膜由粒度均匀的纳米颗粒组成, 颗粒大小约为 25 nm, 与. XRD 估计的结果相同. 此外, 薄膜表面粗糙, 其不平整度大约在 30 nm 左右, 并伴. 有大尺寸的起伏与缝隙. 应, 提高薄膜的发光效率. ( 4at.% 为 611 nm) . 320 nm 左右. CeO2. 值得注 意的是 , 样品的相应值 320 nm 分别高出 53 nm 和 40 nm. 我们分析, 造成这一差异的原因是: 短, 键本征振动 …

2010年8月31日 · CeO2 纳米晶体的室温 PL 光谱在 300 nm 波长处激发，显示在 400 和 360 nm 处发射，对应于在 160°C 和 200°C 温度下合成的 CeO2，相应的 E g 值分别为 2.94 eV 和 3.60 eV。从 SEM 获得的显

2024年8月12日 · In this work, we aim to fabricate a high-performance CeO2/Si photodetector by growing a CeO2 nanostructure film on a silicon substrate using the pulsed laser deposition (PLD) technique at different laser energy densities.

2024年12月19日 · Photoluminescence spectroscopy (PL) explains the behavior of charge carriers and the appearance of defects within a heterojunction semiconductor through exciton emissions. The PL emission spectra of the samples were depicted in the range of 350–600 nm (Fig. 8a).