目前常见的应变硅工艺包括 应力记忆技术 （smt）、 接触孔刻蚀停止层 （cesl）、 嵌入式sige 、 嵌入式sic ，他们对 nmos 和 pmos 的不同作用分别表示如下。 smt工艺

2020年5月21日 · Among the various methods to form strained channel, stress liner technology, which is based on SiN x contact etch stop layer (CESL), is considered as an effective way to improve transistor’s performance through inducing tensile stress in NMOS channel and compressive stress in PMOS channel [8,9,10].

高应力SiN x 薄膜沉积技术被广泛用于纳米级晶体管结构中，以诱导应变并改善沟道区中的载流子传输。 在这项工作中，已经研究了高拉伸应力SiN x 薄膜的合成和工艺。 通过多次处理N 2 等离子体获得高张应力的SiN x 薄膜。 将优化的SiN x 薄膜集成到26 nm晶体管中，发现驱动电流I dsat 提高了27％。 The high stress SiN thin film deposition technology is widely used in nano-scale transistor structure to induce strain and improve the carrier transport in the channel region.

2007年6月1日 · For the inspection of CESL film thickness, devices with 700 Å HS CESL possess efficient mobility enhancement and hot-carrier reliability immunity than devices with 1100 Å HS CESL do. Owing to inappropriate high tensile stress, the thicker HS CESL (1100 Å) will induce larger stress defects and damage the device’s channel lattice structure ...

2018年4月1日 · Covering a MOSFET with a contact etching stop layer (CESL) generates a tensile strain in the channel region, thereby enhancing electron carrier mobility [2], [3]. Silicon and silicon germanium lattice mismatch produces biaxial compressive strain in the channel region, causing a difference between the conduction and valence band energies of the ...

2007年5月29日 · Abstract: This paper presents a study on the effectiveness of strained contact-etch-stop-layer (CESL) technologies in aggressively scaled dense structures. The focus is on nested transistors, which is a technologically very important structure that consists of a chain of gates on one active area.

The geometric dimensions of spacer, gate height, and the contact etch stop layer (CESL) are important factors among the feasible booster. This study utilized the mismatch of the thermal expansion coefficients of stressors to simulate the process-induced stress in the N-MOSFET.

2024年7月30日 · 在SMT技术的基础上开发出的接触刻蚀阻挡层应变技术（Contact Etch Stop Layer,CESL），它是利用Si3N4产生单轴张应力来提升 NMOS 速度和单轴压应力来提升[110]晶向上PMOS速度的应变技术。

2017年6月1日 · In this investigation, the n-channel metal–oxide–semiconductor file–effect transistor (MOSFET) with contact–etch–stop–layer (CESL) stressor, SiGe channel, and dummy poly gate is proposed. The simulated technique is utilized to explore the stress distribution of nMOSFET with the channel region induced by foregoing mechanical.

Among the various methods to form strained channel, stress liner technology, which is based on SiNx contact etch stop layer (CESL), is considered as an efective way to improve transistor’s performance through inducing tensile stress in NMOS channel and …