about cxmt 长鑫存储是一家一体化存储器制造公司，专注于动态随机存取存储芯片(DRAM)的设计、研发、生产和销售。 创立于2016年，长鑫存储总部位于安徽合肥，在国内外拥有多个研发中心和分支机构。

长鑫科技集团自主研发的ddr4内存芯片能够满足市场需求，广泛应用于办公、居家、休闲娱乐等众多场景，为云服务、 物联网等多种设备和产品赋能，带给用户更加出众的使用体验。

下载CXDQ3A8AM-IJ-A中文资料、引脚图、Datasheet数据手册，有DDR SDRAM详细引脚图及功能的应用电路图电压和使用方法及教程。

The DDR4 is a fourth-generation double data rate synchronous dynamic random access memory. Compared to DDR3, it provides faster data transfer rates, more stable performance, and lower power consumption.

CXMT started the production of DDR4 dies using 19nm lithography, aka 10G1 technology. The fourth-generation double data rate (DDR) DRAM has fast data transfer that matches the high speed produced by top DRAM competitors. Their characteristics of low power consumption and stable performance meet the mainstreammarkets’ needs.

2020年2月25日 · 据介绍，长鑫DDR4内存芯片可匹配主流市场需求，支持多领域应用、多产品组合，并有充分的可靠性保障，规格方面单颗容量8Gb (1GB)，频率2666MHz，电压1.2V，工作温度0℃至95℃，78ball、96ball FBGA两种封装样式。 长鑫特别强调，这是第一颗国产的DDR4内存芯片。 根据此前消息，这些芯片都采用国产第一代10nm级工艺制造，预计到2020年底月产能可达4万片晶圆。 DDR4内存条也是长鑫自主开发设计，搭载原厂颗粒，种类齐全，提供UDIMM桌 …

ChangXin Memory Technologies (CXMT, Chinese: 长鑫存储) [a] is a Chinese semiconductor integrated device manufacturer headquartered in Hefei, Anhui, specializing in the production of DRAM memory. As of 2020, ChangXin manufactured LPDDR4 and DDR4 memory on a 19 nm process, with a capacity of 40,000 wafers per month. [1]

CXMT (长鑫) CXDB4CBAM-MK-A参数名称：存储器构架 (格式)：SDRAM LPDDR4X；存储容量：2Gbit；工作电压：1.7V~1.95V；工作温度：-25℃~+85℃。 下载CXDB4CBAM-MK-A中文资料、引脚图、Datasheet数据手册，有DDR SDRAM详细引脚图及功能的应用电路图电压和使用方法 …

2025年2月23日 · CXMT provides DDR3L (2Gb/4Gb), DDR4 (4Gb/8Gb), LPDDR4X (6Gb/8Gb), and LPDDR5 (12Gb), and has now added DDR5 DRAM devices. The memory maker initially produced G1 DRAM generation with 23.8 nm (D2y) and then G2 with 18.0 nm (D1x).

CXDQ3BFAM-WG CXMT - 8Gbit SDRAM DDR FBGA-96 DDR SDRAM DDR SDRAM. Check out the in-stock pricing and datasheet for electronic components from LCSC Electronics.