2025年1月24日 · The die has CXMT’s new and advanced G4 DRAM generation with 0.0020 µm2 cell size and 16.0 nm feature size (F). CXMT reduced DRAM cell size by 20% from the …

2024年12月31日 · However, according to the findings of a Chinese semiconductor researcher, the die size of CXMT's 16 Gb DDR5 memory IC is 40% larger than that of a competing Samsung …

ChangXin Memory Technologies (CXMT, Chinese: 长鑫存储) [a] is a Chinese semiconductor integrated device manufacturer headquartered in Hefei, Anhui, specializing in the production of …

This report constitutes a deep analysis of CXMT DDR4 memory. It covers the full memory package and the 8Gb die. The report includes high resolution images of the die and memory …

The new product offers a single-die density of 12Gb, with a speed of 6400Mbps, representing a 50% improvement over LPDDR4X, while simultaneously reducing power consumption by …

On November28 2023, CXMT announced the launch of several LPDDR5 products, including 12Gb LPDDR5 dies, 6GB LPDDR5 mobile DRAM, and 12GB LPDDR5 mobile DRAM. The …

2025年1月1日 · 中国の新興メモリメーカーChangXin Memory Technologies（CXMT）が製造を開始したDDR5メモリチップについて、その物理的な特性が明らかになった。 最新の分析に …

快科技2月12日消息，据韩国媒体报道，长鑫存储（CXMT）正在加速开发下一代DRAM技术，其并未按原计划为首款商用DDR5产品采用的17nm,而是直接采用了16nm制程技术。

2020年7月14日 · This is the first DDR4 DRAM product fabbed from CXMT and the first 8 Gb DRAM die from China. The cell size is 0.0045 um2 with a bit density of 0.102 Gb/mm2. The …

软件准确辨认出了制造商“CXMT长鑫存储”与A-Die的颗粒编号，2Ranks的规格则表明这是一套 双面内存，单颗粒容量为8Gbit。 但是， 台风却在“22nm”的技术制程上犯了错误 ——公开资料 …