2025年2月4日 · This memory floorplan analysis (MFR) explores the CXMT CXDB6CCDM-MA die. The CXMT CXDB6CCDM-MA is a FBGA package measuring 15.0 mm × 10.0 mm × 0.78 mm thick, with 200 solder balls at the bottom. The CXDB6CCDM-MA package contains eight 8 Gb LPDDR4X DRAM dies.

2025年2月4日 · The MiliankeMLK-CA03 is a field programmable gate arrays (FPGA) development board containing two of the GigaDeviceGDP1BFLM BGA packages. The GDP1BFLM BGA package measures 13.00 mm ×7.50 mm ×0.94 mm thick and has 96 solder balls. The GDP1BFLM package contains a single 2 Gb CXMT G3 DDR3L SDRAM die.

2024年12月20日 · CXMT's DDR5 memory is believed to be produced using CXMT's G3 process, which has a line width of 17.5nm, reports ZDNet Korea, citing its sources. Experts questioned by the website estimate a...

2024年12月19日 · 최 박사는 "이미 CXMT가 더 진보된 G5 공정을 개발하고 있는 상황에서, G3 공정은 상당히 성숙 (matured) 돼 있다"며 "CXMT의 G1 및 G3 공정은 80% 정도의 수율에 도달한 것으로 알고 있다"고 밝혔다. 최 박사는 이어 "해당 DDR5이 정말 CXMT의 제품일 경우, 시중에서 가장 많이 유통되고 있는 제품이...

2024年9月20日 · The GDP1BFLM package contains a single 2 Gb CXMT G3 DDR3L SDRAM die. The DDR3L SDRAM (HUANGSHAN4G) die measures 6.26 mm × 6.31 mm (39.50 mm2) as measured from the die seals or 6.30 mm ×6.36 mm (40.07 mm2) for the full die.

ChangXin Memory Technologies (CXMT) is officially China’ssolitary DRAM maker. CXMT started the production of DDR4 dies using 19nm lithography, aka 10G1 technology. The fourth-generation double data rate (DDR) DRAM has fast data transfer that matches the high speed produced by top DRAM competitors. Their characteristics of low power consumption

2024年12月21日 · cxmtの技術的進歩と生産体制. cxmtは最新の第3世代（g3）製造プロセスを用いてddr5メモリの製造を行っている。このプロセスは17.5nmの配線幅を実現しており、これは現代のメモリ製造において相当に微細な工程といえる。

快科技2月12日消息，据韩国媒体报道，长鑫存储（CXMT）正在加速开发下一代DRAM技术，其并未按原计划为首款商用DDR5产品采用的17nm,而是直接采用了16nm制程技术。

2021年6月3日 · 中国北京（2022年9月8日） — 业界领先的半导体器件供应商兆易创新GigaDevice（股票代码 603986）宣布，推出公司首款自研DDR3L产品——GDPxxxLM系列， …

2025年3月5日 · Insight on the structure and materials used in the manufacture of the GigaDevice HUANGSHAN4G G3 2 Gb DDR3L SDRAM die. The report includes a summary of key findings, and a detailed look at the array and peripheral structures, and materials used. SEM, TEM and materials analysis provide a complete look at how this device was manufactured.

2025年1月31日 · TechInsights 在光威 DDR-6000 UDIMM 模块中发现了 CXMT 的新型 16 nm DRAM 芯片，证实了中国内存行业的进步。 CXMT 16 Gb DDR5 芯片尺寸为 67 平方毫米，密度为每平方毫米 0.239 Gb。

ChangXin Memory Technologies (CXMT, Chinese: 长鑫存储) [a] is a Chinese semiconductor integrated device manufacturer headquartered in Hefei, Anhui, specializing in the production of DRAM memory. As of 2020, ChangXin manufactured LPDDR4 and DDR4 memory on a 19 nm process, with a capacity of 40,000 wafers per month. [1]

2024年12月21日 · According to Jeongdong Choi, a semiconductor analyst at TechInsights, CXMT's DDR5 production has been a development worth watching. Choi revealed that the chips are being produced using a G3 process technology (17.5nm linewidth), marking an evolution from the previous G1 (22nm) technology used for DDR4 production.

2024年3月5日 · CXMT CXDB6CCDM-MA G3 8Gb LPDDR4X Memory Floorplan Analysis This report contains the following detailed information: Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs

芯片表面印有“CXMT” (长鑫存储)的标志，这就是长鑫DRAM颗粒了，16G单条内存，双面颗粒，共16颗长鑫DRAM颗粒。 相信以后这个颗粒，大家能经常看到。 颗粒上的2013是指2020年第13周的生产日期。 Intel平台方面我们选择了刚刚发售的 ASUS PRIME Z490-P. 手动超频到3700MHz，CL值19-19-19-42. AIDA64读写速度评分还是不错的~ 也可以读到内存厂商为ChangXin. 在3700MHz下，做了 Memtest 稳定性测试可以顺利通过。 AMD平台选择的是 …

2025年2月13日 · ChangXin Memory Technologies (CXMT) has accelerated its next-generation DRAM development, transitioning from 17nm to 16nm process technology for its first DDR5 product, according to TechInsights....

2019年12月2日 · ChangXin Memory Technologies (CXMT), previously known as Innotron, has started production of computer memory using a 19 nm manufacturing technology. The company has a roadmap for at least...

2023年6月14日 · Chinese DRAM chipmaker ChangXin Memory Technologies (CXMT) is ramping up chip production utilizing the third iteration of its in-house developed 19nm (previously claimed to be 17nm) process ...

2025年2月4日 · The CXMT CXDBCCCDM-MA is a BGA package measuring 14.99 mm × 10.01 mm × 0.68 mm thick, with 200 solder balls at the bottom. The CXDBCCCDM-MA package contains eight 6 Gb LPDDR4X DRAM dies. The DRAM feature size designates the device as CXMT G3 class DRAM.