2022年11月2日 · This study investigated the effects of high-pressure deuterium (D2) annealing and hydrogen (H2) annealing on the electrical performance and low-frequency noise (LFN) of a fully depleted...

2003年2月12日 · To clarify the thermal/chemical reactions that occur during the introduction of D atoms, we observed chemical structures that con-tain H/D atoms in the interlayer dielectrics using an FTIR. D2 annealing followed by additional an-nealing in N2 or H2 ambient at 450°C was also carried out to check their thermal stabilities.

1994年1月1日 · Hydrogen annealing effects on SiO 2 /Si(100) interface traps and bulk oxide traps have been investigated through deuterium (D 2) anneal of ultra-thin SiO 2 films. The interface traps are annihilated by low-temperature D 2 anneal, whereas high-temperature anneal allows for

2020年7月24日 · High-pressure (HP) deuterium (D 2) annealing was applied to a gate-all-around (GAA) MOSFET to improve device reliability and memory performance. The structure had gate dielectrics of oxide–nitride–oxide (ONO), which completely straddled vertically stacked multiple silicon nanowires (Si-NWs) with n + poly-Si gates.

High pressure annealing increases the rate of deuterium incorporation at the SiO/sub 2//Si interface. We have achieved a significant lifetime improvement (90/spl times/) from fully processed wafers (four metal layers) with nitride sidewall spacers and SiON cap layers.

2022年11月1日 · Low-temperature deuterium (D 2) annealing (LTDA) is applied to improve performances and reliability of a MOSFET. The LTDA is performed at 300 °C, which is at least 100 °C lower than the widely used temperature of forming gas annealing (FGA) with H 2, which contributes to reducing a thermal budget especially in the backend-of-the-line (BEOL).

Through slow Id-Vg measurements and RTN analysis, it is shown that doping can cure poly-Si channel defects while deuterium (D2) anneal can passivate both traps present in the channel and in the ONO gate stack. Finally, it is shown that the D2 anneal can also help to improve the retention after cycling.

Surface nitrided sample and RTNO PDA sample showed significant transconductance improvement after high pressure annealing. nFET Id -40 Dit -60 nFET ΔVth pFET ΔVth degrade. improved performance as...

2022年12月25日 · As compared with conventional forming gas annealing (FGA), a dramatic reduction in the interface state density (D it) was achieved after both H 2 - and D 2-HPA processes at the equivalent temperature (300 °C) and time (30 min) by effectively passivating the Ge-induced dangling bonds at the interface region.

2016年10月1日 · Low-temperature deuterium (D2) annealing (LTDA) is applied to improve performances and reliability of a MOSFET. The LTDA is performed at 300 oC, which is at least...