SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D965 TRANSISTOR (NPN) TO-92 FEATURES 1.EMITTER Audio Amplifier 2. COLLECTOR Flash Unit of Camera Switching Circuit 3.

下载D965中文资料、引脚图、Datasheet数据手册，有三极管(BJT)详细引脚图及功能的应用电路图电压和使用方法及教程。

2021年3月5日 · Silicon NPN epitaxial planer type Transistor. Features. 1. Low collector to emitter saturation voltage VCE (sat). 2. Satisfactory operation performances at high efficiency with the low-voltage power supply. Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage: Vcbo = 40 V. 2. Collector to Emitter Voltage: Vceo = 20 V. 3.

The D965 is an NPN bipolar junction transistor that is widely used in low-frequency power amplification and as a stroboscope in various electronic circuits. This transistor is recognized for its ability to handle a collector current of 5A, making it suitable for medium power applications.

Description: NPN EPITAXIAL SILICON TRANSISTOR. 4 Results. Part #: D965ASSG-X-AE3-R. Datasheet: 215Kb/4P. Manufacturer: Unisonic Technologies.

D965 TRANSISTOR (NPN) TO-92 FEATURES Audio amplifier Flash unit of camera Switching circuit 1.EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation ...

发射极与基极反向漏电流（I EBO ）： 0.1 μA. 集电极与发射极饱和电压（V CE(sat) ）： 【集电极电流（Ic）＝3 A】 0.35 V

2024年2月17日 · D965三极管是一种双极型晶体管，其工作原理基于PN结的导电性变化。 当给定一个正向偏置电压时，PN结会变得导电，电流可以从发射区流向集电区。 而当给定一个反向偏置电压时，PN结会变为绝缘状态，电流无法通过。 在D965三极管中，基极电流控制着发射极与集电极之间的电流放大倍数。 当基极电流较小时，发射极与集电极之间的电流放大倍数也较小。 而当基极电流较大时，电流放大倍数也较大。 这种特性使得D965三极管可以被用作放大器、开关 …

omponents D965-T Street Chatsworth. D965-T. NPN Plastic-Encapsulate Transistors Features. • Power Dissipation: PCM=0.75W @ Tamb=25 • Collector Current: ICM=5A. Maximum Ratings .

FeiHong (飞虹) D965A参数名称：集电极电流 (Ic)：5A；集射极击穿电压 (Vceo)：20V；耗散功率 (Pd)：750mW。 下载D965A中文资料、引脚图、Datasheet数据手册，有三极管 (BJT)详细引脚图及功能的应用电路图电压和使用方法及教程。