2025年2月14日 · The dynamic gas lock (DGL) is an effective structure in extreme ultraviolet (EUV) lithography, designed to mitigate the diffusion of hydrocarbons from the wafer chamber to the optics chamber. This study presents a comprehensive DGL model that considers adsorption, desorption, and decomposition of hydrocarbons on the optical surface.

2022年6月22日 · Dynamic gas lock (DGL) is an important technology for contamination control of extreme ultraviolet (EUV) lithography. DGL prevents contamination diffusion from the dirty compartment into the clean one and allows passage of EUV light between compartments. A number of DGL structures have been proposed for EUV scanners.

2023年12月10日 · Dynamic gas lock (DGL) is an effective method to inhibit carbon deposition on optical surface in extreme ultraviolet (EUV) lithography machines. However, due to the complexity of the internal flow in DGL, relevant theoretical analyses remain incomplete.

2024年1月29日 · The optical surface of extreme ultraviolet (EUV) lithography machines is highly vulnerable to contamination by hydrocarbons, resulting in the formation of carbon deposits that significantly degrade the quality and efficiency of lithography. The dynamic gas lock (DGL) has been proven as an effective approach to alleviate carbon deposition.

Results include temperature, electron density, spectral emission, etc. The plasma code’s outputs were processed to produce synthetic source data. The comparison to experiments helps to validate the code and understand it’s accuracy. Fig. 1. Images of …

2024年1月28日 · The optical surface of extreme ultraviolet (EUV) lithography machines is highly vulnerable to contamination by hydrocarbons, resulting in the formation of carbon deposits that significantly degrade the quality and efficiency of lithography. The dynamic gas lock (DGL) has been proven as an effective …

2023年11月11日 · 动态气锁（dgl）是抑制极紫外（euv）光刻机光学表面积碳的有效方法。 然而，由于DGL内部流程的复杂性，相关的理论分析仍然不完整。 本工作采用基于OpenFOAM平台的直接模拟蒙特卡罗（DSMC）方法来研究DGL和工程光学盒（POB）中稀薄气体的输运过程。

Dynamic gas lock (DGL) is an important technology for contamination control of extreme ultraviolet (EUV) lithography. DGL prevents contamination diffusion from the dirty compartment into the clean one and allows passage of EUV light between compartments.

Only one working point where EUV intensity, CxHy pressure, O2 pressure are balanced. Otherwise either carbon growth or oxidation will occur. Surface coverage by light hydrocarbons is not stable. Light hydrocarbons will be replaced by heavy hydrocarbons over time. New metal oxide resists evolve, contamination issues not known.

• Using DGL membrane to eliminate DUV and IR at wafer level has an impact on EUV transmission • Using spectrum measured at source for feedback control has limitations