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Investigating the growth behavior of titanium dioxide film …
2024年10月15日 · Limited by the general glass substrates, Dep.-TiO 2 were annealed at 500 °C for 1 h, and annealed TiO 2 films (Ann.-TiO 2) were obtained. To analyze the thickness, …
分子印迹TiO 2 纳米管阵列的制备与选择性光电催化降解邻苯二甲 …
摘要: 以邻苯二甲酸二乙酯（DEP）为模板分子，在TiO 2 纳米管阵列（TNA）上沉积了能识别DEP分子的TiO 2 纳米颗粒，制备了DEP分子印迹型TNA（DM-TNA）。 X射线衍射（XRD） …
Compound-specific isotopic analysis to characterize the …
2022年11月1日 · In this study compound-specific isotope analysis (CSIA) has been used to explore the degradation mechanism of nano titanium dioxide (TiO 2) catalyzes …
DRAM电容器电介质用原子层沉积Al掺杂TiO2薄膜的漏电流特 …
我们研究了通过在TiO 2薄膜中掺杂Al来降低漏电流。在TiO 2薄膜沉积过程中，Al 2 O 3薄膜沉积用于Al掺杂。XPS分析表明，TiO 2薄膜中Al掺杂量越大，发现的氧空位越少。TiO 2的n型特性 …
Leakage Current Characteristics of Atomic Layer Deposited Al-Doped TiO ...
2021年8月23日 · We researched the reduction of leakage current by Al doping in TiO 2 thin film. During the TiO 2 thin film deposition process, Al 2 O 3 thin film deposition was used for Al …
学性能、电子结构及其导电机理没有关注. 鉴于TiO在电极材料及微电子结构器件中的应用本文对, TiO 和碳掺杂TiO (C-TiO)的电子结构开展第一性原理研究本文首先从实验上.制备出薄膜并对其 …
Leakage Current Characteristics of Atomic Layer Deposited Al-Doped TiO ...
2021年8月23日 · We researched the reduction of leakage current by Al doping in TiO 2 thin film. During the TiO 2 thin film deposition process, Al 2 O 3 thin film deposition was used for Al …
The effect of an annealing process on atomic layer deposited TiO …
2021年11月5日 · To deposit TiO 2 thin films, we used MAP-Ti metal organic precursor (C 12 H 23 N 3 Ti) and DI water (H 2 O) as the reactant. The annealing process and analysis were carried …
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