BEAMER provides innovative tools for PEC and advanced process correction for nanoscale electron-beam lithography. A robust 2D PEC is complemented by a model-based shape and rule-based corner correction, plus correction for 3D correction …

2023年3月1日 · This paper proposes a fast and accurate shape-based proximity effect correction (PEC) algorithm based on pattern edge shape adjustment (PESA) for electron beam lithography (EBL). By performing PEC calculations with three layout sizes (1 μm, 2 μm, and 4 μm) under three technology nodes (40 nm, 28 nm, and 14 nm), it is shown that the proposed ...

HNU-EBL: A Software Toolkit for Electron Beam Lithography Simulation and Optimization (by HuNan University) Conclusion 2021/12 © 湖南大学-电气与信息工程学院-刘 …

PEC method for EBL based on the fast multipole method (FMM). FMM in PEC just calculates the interaction between all the expo-sure points, and thus, it gets rid of the limitation of the equally spaced grid. Compared to the state-of-the-art PEC method based on 2D-FFT, the calculation speed of FMM will exceed the cur-

The proximity effect correction (PEC) of patterns has significant applications in electron beam lithography (EBL) systems that cannot adjust dosage arbitrarily. This paper proposes a PEC method that discretizes the pattern into feature points and compensates for the proximity effect by changing the shape of the design through the movement of ...

2022年8月1日 · Based on a simple interpretation of the spread, a proximity effect correction (PEC) algorithm was established. Implementing this, we could realize high-quality nanostructures with direct-write 50 kV EBL on AR-P 6200 (CSAR 62) resist. The latter translates to quick and inexpensive exposures that offer good compatibility with further processes.

2022年4月29日 · This article proposes an efficient unequally spaced grid PEC method for EBL based on the fast multipole method (FMM). FMM in PEC just calculates the interaction between all the exposure points, and thus, it gets rid of the limitation of the equally spaced grid.

2010年10月1日 · In this paper, we focus on the fabrication of asymmetric bow-tie optical antennas using E-Beam Lithography (EBL) techniques and we aim to improve the resolution of this technique by correcting Proximity Effects (PE) through dose modulation guided by Linear Programming (LP) algorithms.

We propose a dose and shape modification proximity effect correction (PEC) for forward-scattering range scale features in electron beam lithography (EBL). An existing dose modification PEC provides good results for the features of size larger than 2/spl alpha/ or 3/spl alpha/ (/spl alpha/ is forward-scattering range parameter).

I review the work of proximity effect correction (PEC) in electron-beam (e-beam) lithography with emphasis on dose modification and shape modification PEC techniques. I. Proximity Effect Correction

Simulation for eBeam Lithography using Casino3, Python, CUDA and FFT. This package requires a Nvidia's CUDA GPU capable. A third party software is needed for generating the psf data (i.e. Casino3). pecebl gives some basic pattern designer like : dot, line, rectangle, ring, circle, move, replace, append. pecebl should make it easy:

2017年9月8日 · Electron-beam lithography (EBL) is an important technique in manufacturing high-resolution nanopatterns for broad applications. However, the proximity effect in EBL can …

Abstract: This paper proposes a proximity effect correction (PEC) method for electron beam lithography (EBL) using multilayer perceptron (MLP) neural network (NN). By leveraging the symmetric characteristics of the point spread function (PSF), several annular regions divided around the exposure point are used as the input of NN.

2022年6月16日 · PEC, energy deposition, and development for different depths of PSF. Added shape-based PEC method. Added three new development models for selection; Modified the visualization interface of development, and adjusted the measurement distance and EPE function.

2023年3月1日 · This paper proposes a fast and accurate shape-based proximity effect correction (PEC) algorithm based on pattern edge shape adjustment (PESA) for electron beam lithography (EBL). By performing PEC calculations with three layout sizes (1 μm, 2 μm, and 4 μm) under three technology nodes (40 nm, 28 nm, and 14 nm), it is shown that the proposed ...

2022年4月1日 · Based on a simple interpretation of the spread, a proximity effect correction (PEC) algorithm was established. Implementing this, we could realize high-quality nanostructures with direct-write 50...

2006年4月1日 · Based on a simple interpretation of the spread, a proximity effect correction (PEC) algorithm was established. Implementing this, we could realize high-quality nanostructures with direct-write 50 kV EBL on AR-P 6200 (CSAR 62) resist. The latter translates to quick and inexpensive exposures that offer good compatibility with further processes.

Abstract: This paper proposes an efficient proximity effect correction (PEC) method for electron beam lithography $(E B L)$ based on distributed parallel computing. To facilitate PEC calculations of large-scale layout, this method splits the exposure layout into multiple sub-layouts, and distributes them to different computer nodes for ...

2020年7月8日 · specifications by EBL, an improved proximity effect correc-tion (PEC) method is proposed in this work to obtain better development conditions with vertical sidewalls, through accurate representation of the scattered electron beam. 2. EBL PEC process for Si photonics In this work, a relatively thick ZEP-520A resist mask of