他们的Clean Track Lithius Pro Z 与每台 ASML EUV 机器一起使用。 事实证明，它对于最初的 EUV 节点是可靠且高效的，但随着行业超越单一图案化 EUV，化学放大抗蚀剂 (CAR) 显然已达到极限。

EUV Process improvements on Track system Masahiko Harumoto, *Harold Stokes, *Yan Thouroude, Osamu Tamada, Tadashi Miyagi, Koji Kaneyama, Charles Pieczulewski and Masaya Asai

challenges of pattern control of novel complex geometric shapes through dry etch and EUV process, needed to enhance silicon surface area have been d scussed in the paper. The solutions proposed for EUV track developer optimization through new developer nozzle is critical for any memory technology pursuing EUV process. Dr

CLEAN TRACK™ LITHIUS Pro™ Z is TEL's most advanced 300mm coater/developer for the 10nm technology node and beyond. It incorporates user-friendly operation, flexible configurations for future processes, and automated monitoring technology to support a wide range of applications from next generation development to high volume mass production.

CLEAN TRACKTM LITHIUS ProTM Z reduces in-film particle, pattern collapse and pattern defect with newly introduced technologies. Future demand of coater/developer system is Data generation and usage to minimize the Turn around time (TAT) and process excursion.

2016年3月18日 · Line width roughness (LWR) control and defect reduction are demonstrated utilizing the SOKUDO DUO coat-develop track system with ASML NXE:3100 and NXE:3300 exposures in the IMEC (Leuven, Belgium) cleanroom environment.

There are several different material approaches for EUV lithography such as chemically amplified positive tone resist (CAR), negative tone resist, and non-CAR resist. Fundamental studies and optimization of individual materials are required for application toward EUV manufacturing.

Line width roughness (LWR) and defect control are demonstrated utilizing the SOKUDO DUO coat-develop track system with an ASML NXE:3100 in the IMEC (Leuven, Belgium) clean room environment. Additionally, we will show the latest lithographic results obtained by novel processing approaches in an EUV coat-develop track system.

2015年3月19日 · Line width roughness (LWR) and defect control are demonstrated utilizing the SOKUDO DUO coat-develop track system with an ASML NXE:3100 in the IMEC (Leuven, Belgium) clean room environment....

Extreme ultraviolet lithography (EUVL) technology is a promising candidate of semiconductor process for 18nm half pitch and beyond. It still requires fine resolution, uniform, smooth patterns and low defectivity, not only after lithography but also after the etch process. CLEAN TRACKTM LITHIUS ProTMZ-EUV.