Extreme ultraviolet lithography (EUVL, also known simply as EUV) is a technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses 13.5 nm extreme ultraviolet (EUV) light from a laser-pulsed tin (Sn) plasma to create intricate patterns on semiconductor substrates.

2024年11月28日 · EUVL has emerged as a critical technique, taking advantage of shorter wavelengths to achieve nanoscale feature sizes with higher precision and lower defect rates than previous lithography methods.

Extreme ultraviolet lithography (EUVL) was recently adopted by the semiconductor industry as the leading-edge lithography technique for continued miniaturization of...

Although extreme ultraviolet lithography (EUVL) has potential to enable 5-nm half-pitch resolution in semiconductor manufacturing, it faces a number of persistent challenges. Line-edge roughness (LER) is one of critical issues that significantly affect critical dimension (CD) and device performance because LER does not scale along with feature ...

2019年6月19日 · In this paper, we had a broad but not specialized overview of extreme ultraviolet lithography technology and its application in mainstream semiconductor wafer manufacturing. Major EUVL modules include light source and vessel, reflection mirror system under vacuum, reflective reticle and aerial inspection system.

2019年6月1日 · Although several years delayed than its initial plan, extreme UV lithography (EUVL) with 13.5nm wavelength has been finally implemented into high volume manufacture (HVM) of mainstream...

2023年9月1日 · The current EUV-IL setup is capable of fabricating line/space patterns down to 25 nm half-pitch in hydrogen silsesquioxane (HSQ) resist. Preliminary exposure results revealed that optimized slit width and exposure time significantly improved line/space pattern quality.

极紫外光刻（英语：Extreme ultra-violet，也称EUV或 EUVL）是一种使用 极紫外 （EUV）波长的下一代光刻技术，其波长为13.5纳米，预计将于2020年得到广泛应用。 几乎所有的 光学材料 对13.5nm波长的极紫外光都有很强的吸收，因此，EUV光刻机的 光学系统 只有使用 反光镜 [1]。 极紫外光刻的实际应用比原先估计的将近晚了10多年。 [2] EUV光刻采用波长为10-14纳米的 极紫外光 作为光源，可使曝光波长一下子降到13.5nm,它能够把光刻技术扩展到32nm以下的 特征尺 …

Today’s most advanced semiconductor lithography process uses an EUV light source, specifically light at 13.5 nm. EUV light allows for smaller features to be built into a semiconductor. EUVL systems currently cost a reported $150 million and were first deployed in 2019 by ASML, which maintains a 100% market share [5].

Today's materials and tool infrastructure is supporting EUVL for pilot line applications with industry efforts focused on addressing the remaining challenges to