2024年11月28日 · EUVL requires a vacuum, reflective optics and reflective reticle — referred to as a photomask — owing to the strong absorbance of all materials at EUV wavelengths. Owing to multilayer coatings,...

2018年3月21日 · This paper discusses the principal theory on the EUV mask design and its component materials including ML reflector and EUV absorber. Mask shadowing effect (or mask 3D effect) is explained and its technical solutions like phase shift mask is reviewed.

2021年2月23日 · Mask specific challenges involve mask deficiency induced stochastic failures, the anamorphicity of high-NA EUVL and mask 3D effects. Pellicle development and mask lifetime understanding are well progressing to control mask deficiency impact on wafer, and mask data prep software is being made aware to handle different mask reduction factors.

1998年12月1日 · In extreme ultraviolet lithography (EUVL), the technology specific requirements on the mask are a direct consequence of the utilization of radiation in the...

Current etched ML mask CD performance catches up EUV mask requirement of 0.33NA @2015. Continuous improvement of etched ML mask CD performance is required for high-NA. EUV peak reflectivity loss is only 10% by reducing 40ML pairs to 20ML pairs. Lithographic performance needs to be evaluated from the viewpoint of EUV source power.

AGC is the only supplier to take care of all essential processes and materials to EUV mask blank, starting from LTEM to film materials. Here is the list of major properties required for EUVL blank. AGC has in-house metrology toolset to evaluate all of these properties. Defect data of substrate and ML will be mainly updated.

Significant progress has been made in developing mask fabrication processes for extreme ultraviolet lithography (EUVL). The mask blank for EUVL consists of a low thermal expansion material substrate having a square photomask form factor that is coated with Mo/Si multilayers. A SEMI standard is now available for mask substrates.

Etched multilayer pattern of hp40nm on mask (hp10nm on wafer using 4X optics) is demonstrated using EUV mask blank with hard mask process. These results show the potential capability of etched multilayer mask structure for high-NA EUVL with 4X full-field 6 inch mask.

2001年11月1日 · Extreme ultraviolet lithography (EUVL) is a leading next generation lithography technology. Significant progress has been made in developing mask fabrication processes for EUVL. The mask blank for EUVL consists of a low thermal expansion material substrate having a square photomask form factor that is coated with Mo/Si multilayers.

2025年2月6日 · This paper proposes a fast and accurate learning-based thick-mask model dubbed multi-channel block attention network (MCBA-Net) to solve this problem for EUV lithography. The proposed MCBA-Net introduces geometric feature attention module and structural feature attention module to improve the computation accuracy …