Extreme ultraviolet lithography (EUVL, also known simply as EUV) is a technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses 13.5 nm extreme ultraviolet (EUV) light from a laser-pulsed tin (Sn) plasma to create intricate patterns on semiconductor substrates.

2024年11月28日 · Extreme ultraviolet lithography (EUVL) was recently adopted by the semiconductor industry as the leading-edge lithography technique for continued miniaturization of...

Extreme ultraviolet lithography (EUVL) is a leading technology in semiconductor manufacturing, enabling the creation of high-resolution patterns essential for advanced microelectronics. This review highlights recent progress in inorganic metal-oxide-based photoresists, with a focus on their applications in EUVL.

Advantages of EUV lithography are wide process windows, high throughput (once source power and availability specs are met), and extendibility. Disadvantages of EUV lithography are higher costs & complexity (than ArFi lithography) and infrastructure immaturity.

2023年9月24日 · 极紫外光刻（euvl）的辐射度用于euv光的产生，而工业级euvl工具主要涉及两种类型的光：脉冲的、高功率的红外（ir）激光用于离子化熔融锡（sn），以及用于光刻的波长为13.5纳米的光。前者由专门设计的co2激光器（波长λ = 10.6微米）提供，其平均功率约为30千瓦 ...

2021年1月25日 · 极紫外光刻(EUVL)是以波长为11～14nm的EUV射线为曝光光源的微电子光刻技术，适用于特征尺寸为32nm及更细线宽的集成电路的大批量生产。EUV光源的特点决定了EUVL必须采用镀有多层膜的反射光学元件。为满足光刻成像的质量要求，EUVL光学系统像差要控制 …

2019年6月19日 · Major EUVL modules include light source and vessel, reflection mirror system under vacuum, reflective reticle and aerial inspection system. Multilayer material fabrication and photoresist characterization are also critical in terms of EUV patterning performance, defectivity and edge roughness control.

2023年9月24日 · 滴液生成器是欧洲极紫外光刻 （euvl） 技术中的一个核心组件，对于半导体制造至关重要，在euvl扫描仪的装配中担当重要角色，负责控制进入euv光源室的材料的大小、速度和重复频率。

Overlay performance meets 5nm node and beyond. Significant progress made on productivity and stability. Consistency over time and between tools needs further improvement. Progress is made in the areas of reticle defectivity and resist formulation. Further efforts are needed to meet manufacturing requirements .

Optics for EUV Lithography have evolved over three decades to a level where excellent imaging is demonstrated. Right now, the Starlith® 3400 Optics extends EUV Lithography to 13nm single-shot resolution with high productivity for serial production.