Etch mechanism of an Al2O3 hard mask in the Bosch process
2022年4月1日 · In this work, we employ a combination of Scanning Electron Microscopy (SEM), Spectroscopic Ellipsometry (SE) and X-Ray Photoelectron Spectroscopy (XPS) depth profiling …
How to etch alumina (Al2O3) to reveal microstructure characterizations ...
2017年10月22日 · The best method to etch alumina (Al2O3) is by a standard procedure of electrochemical etching in order to reveal the microstructure characterization of the sample.
The ETCH Mechanism for Al2O3 in Fluorine and Chlorine Based RF Dry Etch ...
2011年2月28日 · An A1 2 O 3 etch mechanism for fluorine based plasmas is proposed, comprising of the formation of AlF x and its subsequent removal under influence of high …
Thermal Atomic Layer Etching of Al2O3 Using Sequential HF and …
2022年7月11日 · The atomic layer etching (ALE) of Al2O3 was demonstrated using sequential HF and BCl3 exposures. BCl3 is a new precursor for thermal Al2O3 ALE that can provide …
Precise Etching Technique of Ultra-Thin Al2O3 Film Using BCl3 …
Precise technique can remove Al2O3 film slowly and evenly by adjusting the gas ratio, pressure, power, temperature and other parameters in ICP plasma. The volatile will release occurs …
Atomic layer etching of Al2O3 using BCl3/Ar for the interface ...
2013年10月1日 · The atomic layer etching (ALET) of Al 2 O 3 has been studied for possible application in precise etch control and low damage etching of the Al 2 O 3 layer for use as the …
Investigation of the atomic layer etching mechanism for Al2O3 …
2024年11月22日 · The ALE process enables accurate control of Al 2 O 3 film thickness with an etch rate of 0.16 ± 0.02 nm per cycle, and an ALE synergy of 98%. The ALE mechanism is …
Etching properties of Al2O3 films in inductively coupled plasma
2004年7月1日 · In this study, Al 2 O 3 thin films were etched in BCl 3 /Cl 2 /Ar chemistry with using ICP etch system. The characteristics of the plasmas were estimated using optical …
Etch Characteristics of Al2O3 in ICP and MERIE Plasma Etchers
2005年3月7日 · The etch characteristics of films were investigated for magnetically enhanced reactive ion etching (MERIE) and inductively coupled plasma (ICP) etch systems as a function …
The Etch Mechanism for Al2O3 in Fluorine and Chlorine Based
2011年2月28日 · The etch behaviour of Al2O3 was studied in Ar, CHF3/Ar, CF4/O2 and Cl2 low pressure RIE plasmas. The influence of dc self-bias voltage, wafer temperature, gas flow and …