2021年3月15日 · Ar + sputter etching is often used prior to X-ray photoelectron spectroscopy (XPS) analyses with the intention to remove surface oxides and contaminants. Since the XPS probing depth is comparable to the thickness of the ion-beam modified layer the signal from the latter dominates the spectra.

XPS depth profile analysis combines X-ray photoelectron spectroscopy with ion beam etching to reveal subsurface information for a range of materials.

2020年10月30日 · The surface chemistry of zinc selenide (ZnSe) was studied by X-ray photoelectron spectroscopy (XPS) as a function of various surface treatments, including etching in solutions of hydrochloric acid (HCl), potassium permanganate:sulfuric acid (KMnO 4:H 2 SO 4), and ammonium hydroxide:ethanol (NH 4 OH:C 2 H 6 O).

2023年11月17日 · This review aims to bring a landscape of typical applications of ion etching techniques in XPS depth profiling to the audience of general materials. According to the sputtering source, the ion etching techniques can be categorized into monatomic ion beam (MAIB), gas cluster ion beam (GCIB) and MAIB + GCIB modes, whose advances made in the past ...

While XPS is a surface sensitive technique, a depth profile of the sample in terms of XPS quantities can be obtained by combining a sequence of ion gun etch cycles interleaved with XPS measurements from the current surface. An ion gun is used to etch the material for a period of time before being turned off whilst XPS spectra are acquired.

2024年8月9日 · Herein the XPS depth profiling of a model system tungsten-carbide-rich nano-layer of high hardness and corrosion resistance is presented.

2018年4月1日 · In this paper, we study the electronic states of Nb and Si at the surface and in depth of ultrathin Si/Nb/Si trilayers by means of depth-profiling X-ray Photoelectron Spectroscopy (XPS).

2023年5月25日 · Essential concepts are introduced, such as binding energy, photoelectric effect, spectral referencing and chemical shift, as well as practical aspects including surface sensitivity, probing depth,...

• Ideal for etching inorganic material • Cluster ions ( Ar+ n) • Low energy per atom (1eV – 100eV) • Minimal surface penetration • Non-damaging to surface chemistry • Low etch rate for large clusters • Large clusters ideal for etching organic material

2013年8月22日 · Through the use of XPS and controlled Ar + etching, the surface composition and oxide species of tantalum oxides (TaO x), which were electrodeposited on glassy carbon electrodes by cyclic voltammetric and constant-potential electrolyses, are …