Extreme ultraviolet lithography (EUVL, also known simply as EUV) is a technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses 13.5 nm extreme ultraviolet (EUV) light from a laser-pulsed tin (Sn) plasma to create intricate patterns on semiconductor substrates.

Using extreme ultraviolet (EUV) light, our NXE and EXE systems deliver high-resolution lithography and make mass production of the world’s most advanced microchips possible

2024年11月28日 · EUV scanners use laser-produced plasma sources. These sources generate EUV radiation in a broad range of wavelengths around 13.5 nm by focusing a laser beam on tin droplets, resulting in a...

2022年9月1日 · Extreme ultraviolet lithography (EUVL) has been demonstrated to meet the industrial requirements of new-generation semiconductor fabrication. The development of high-power EUV sources is a long-term critical challenge to the implementation of EUVL in high-volume manufacturing (HVM), together with other technologies such as photoresist and mask.

2019年8月29日 · For EUV, TRUMPF developed a laser that produces 40 kW of pulsed radiation at a repetition rate of 50 kHz. The laser, with its two seeders and four amplification stages, is so large that it has to be placed on a separate floor below the EUV machine.

2020年9月25日 · High power laser interacts with liquid tin producing a plasma. Plasma is heated to high temperatures creating EUV radiation. Radiation is collected and used to pattern wafers. Over 10 independent variables can affect Target formation, giving …

ASML, Zeiss, and TRUMPF joined forces to develop a technology to produce extreme ultraviolet (EUV) light with a wavelength of 13.5 nanometers for industrial use: In a vacuum chamber, a droplet generator shoots 50,000 tiny tin droplets per second. Each of these droplets is hit by one of the 50,000 laser pulses and turned into plasma.

2023年4月19日 · The development of a high-power EUV light source is very important in EUV lithography to overcome the stochastic effects for higher throughput and higher numerical aperture (NA) in the future. We have designed and studied a high-power EUV free-electron laser (FEL) based on energy-recovery linac (ERL) for future lithography.

EUV stands for "extreme ultraviolet" light. The light visible to humans has wavelengths between 400 and 800 nanometers. The range of ultraviolet light begins below 400 nanometers. The …

Extreme Ultraviolet (EUV) laser technology represents a significant advancement in lithography used for semiconductor chip manufacturing. Operates at wavelengths in the extreme ultraviolet spectrum, around 13.5 nanometers, this technology allows for the creation of micro- and nano-scale features far smaller than previously possible with ...