
Urei 1108 fet mic preamp module 1966 vintage UA universal
Rare 1108 mic preamp module, very early serial #29 - made 1966 one of the first. Used to be racked in a rack that held 3 of these modules, which was then sold with 2 in it, with this 3rd one taken out for later racking, which we never got around to and probably wont.
These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions.
Mnats 1108 Preamp - DIYRE Wiki
The 1108 is a fixed-gain (40dB) FET amplifier module that can be used in a variety of applications. It’s simple, class-A design lend it well to experimentation. To build a mic preamp, one only needs to add gain control, phantom power, and their choice of transformers. The module runs on +24vdc. Price:
BF1108 by NXP USA Inc. Datasheet | DigiKey
BF1108 - plastic surf ace-mounted package; 4 leads SO T143B.
UA 1108 - What does it sound like? - Gearspace
2012年2月10日 · The 2108 was a great box in just about every way, however, the FET in the old 1108 is unobtanium for modern manufacturing and the coupling in the 2108 was totally different and both of these things add up to a very different sounding box.
These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions.
BF1108 MOSFET Datasheet pdf - Equivalent. Cross Reference …
Product profile1.1 General descriptionThese switches are a combination of a depletion type Field-Effect Transistor (FET) and aband-switching diode in an SOT143B (BF1108) or SOT143R …
BF1108R datasheet - BF1108; BF1108R; Silicon RF Switches;; …
SYMBOL FET VDS VSD VDG VSG ID Diode VR IF Tstg Tj continuous reverse voltage continuous forward current drain-source voltage source-drain voltage drain-gate voltage source-gate voltage drain current PARAMETER THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Soldering point of FET gate and diode anode lead.
Renesas Electronics | 2SK1108 - Datasheet PDF & Tech Specs
2002年1月18日 · Renesas Electronics's 2SK1108 is a n-channel silicon junction field effect transistor for impedance converter of ecm 3sst. in the fet transistors, jfets category. Check part details, parametric & specs updated 15-NOV-2024and download pdf datasheet from datasheets.com, a global distributor of electronics components.
HAT1108C Datasheet, mosfet equivalent, Renesas Technology
Download the HAT1108C datasheet for detailed specifications and information on the HAT1108C electronic component.
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