In this Perspective, the physical mechanism of photo-FETs (field-effect transistors) is described and recent advances in the field of low-dimensional photo-FETs and hybrids thereof are …

• It is a transistor controlled by exposure to light. It is similar to photodiode controlling an ordinary bipolar transistor. • It can be either bipolar transistor or field effect transistor (FET). • Its body is …

TMDCs many more layered material systems have been explored in photo-FET device configuration with similar performance, including other chalcogen-based materials such as

Phototransistors are semiconductor -based photodetectors. One needs to distinguish the common bipolar devices from field effect phototransistors (photoFETs); both types are discussed in the …

2024年12月30日 · In this framework, the present paper investigates the optical sensing characteristics of a new Ge -gate FET -based PT including NC effect and plasmonic Gold …

2024年7月1日 · 该工作以“ First Experimental Demonstration of Self-aligned Flip FET (FFET): a Breakthrough Stacked Transistor Technology with 2.5T Design, Dual-side Active and...

In this work, for the first time, the Flip FET (FFET), a novel stacked transistor technology with self-aligned active and interconnects on both sides of wafer,

Fototransistoren sind lichtempfindliche Transistoren. Ihrer hohen Empfindlichkeit wegen bei relativ kleinem Bauvolumen sind sie heute die meistgebrauchten Optosensoren. Es gibt sowohl …

imec 研究人员发现了有关“互补 FET”的新发现，这是一种适用于 1nm 逻辑技术节点及以上节点的有吸引力的器件架构。 在 forksheet 场效应晶体管 (FET) 中，nFET 和pFET 被集成到相同的 …

Der Foto-FET ist ein JFET, bei dem die Gate-Kanal-Diode als Fotodiode ausgebildet ist. Gesteuert wird also der Gatestrom, der an einem Gatewiderstand eine variable …