FQP50N06_onsemi (安森美)_FQP50N06中文资料_PDF手册_价格
onsemi (安森美) FQP50N06参数名称：类型：1个N沟道；漏源电压 (Vdss)：60V；连续漏极电流 (Id)：50A；导通电阻 (RDS (on))：22mΩ@10V,25A；耗散功率 (Pd)：120W；阈值电压 (Vgs (th))：4V；栅极电荷量 (Qg)：41nC；输入电容 (Ciss@Vds)：1.54nF@25V；反向传输电容 (Crss)：90pF@25V；工作温度 ...
FQP50N06 Datasheet (PDF) - Fairchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
FQP50N06 - onsemi
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
FQP50N06 60V N-Channel MOSFET - onsemi
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Low/Medium Voltage MOSFETs | FQP50N06 - onsemi.cn
此先进技术特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。 此类器件非常适用于汽车、DC/DC 转换器，以及便携式和电池运行产品中用于 …
Low Gate Charge (Typ. 24.5 nC) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching • Low Crss (Typ. 90 pF) performance and high avalanche energy strength.
FQP50N06中文资料_PDF数据手册_参数_引脚图_图片-立创商城
FQP50N06是一款60V N沟道QFET®增强模式功率MOSFET，采用平面条纹和DMOS技术生产。 这项先进技术经过特别设计，可最大程度地降低导通电阻，提供出色的开关性能并在雪崩和换向模式下承受高能量脉冲。
FQP50N06 onsemi | Discrete Semiconductor Products | DigiKey
FQP50N06 – N-Channel 60 V 50A (Tc) 120W (Tc) Through Hole TO-220-3 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
FQP50N06 onsemi / Fairchild - Mouser
FQP50N06 onsemi / Fairchild MOSFET TO-220 N-CH 60V 50A 数据表, 库存, 价格.
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