Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory.

F-RAM memories are built on ferroelectric technology. The F-RAM chip contains a thin ferroelectric film of lead zirconate titanate, commonly referred to as PZT. The atoms in PZT change polarity in an electric field, thereby producing a power-efficient binary switch.

What is FRAM? FRAM, an acronym for ferroelectric random access memory, is a non-volatile memory that can hold data even after it is powered off. In spite of the name, FRAM is a ferroelectric memory and is not affected by magnetic fields as there is no ferrous material (iron) in the chip. Ferroelectric materials switch polarity

2022年11月18日 · This particular FRAM chip has 256 Kbits (32 KBytes) of storage, interfaces using I2C, and can run at up to 1MHz I2C rates. Each byte can be read and written instantaneously (like SRAM) but will keep the memory for 95 years at room temperature.

After looking at SPI and I2C SRAM and EEPROM chips, I discovered FRAM. It looks perfect. Available in large sizes (the one linked to above is a 2Mb part), low power, byte addressable and programmable, nonvolatile, no wear issues, no need to explicitly erase anything, and actually cheaper than serial SRAM (comparing against Microchip's parts).

fram 是什么？ FRAM 为非易失性存储器，其功耗、可写入次数、读/写速度均与常用的静态 RAM (SRAM) 很相似。 存储在 FRAM 单元中的信息对应于铁电晶体的极化状态，即使在电源移除之后亦能保存其内容。

FRAM memory chips combines the advantages of SRAM in which writing is roughly as fast as reading (70-200 ns), and EPROM non-volatility and in-circuit programmability. Non-volatile FRAM memory offers an optimized, easy-to-use solution for a variety of advanced electronic metering systems, whether metering electricity, water, gas, or heat.

FRAM, an acronym for ferroelectric random access memory, combines the fast read and write access of dynamic RAM (DRAM) with being non-volatile (the ability to retain data when power is turned off) and ultra-low power consumption (compared to EEPROM and Flash).

2014年1月1日 · We review the history of, and recent advances in, ferroelectric memory, including ferroelectric random access memory (FRAM or FeRAM). FRAM is the first among advanced non-volatile memories, such as magnetoresistive random-access memory (MRAM), phase-change random access memory (PRAM) and resistive random access memory (ReRAM), to be commercialized.

Memory is a semiconductor device that is used as data storage device on an integrated circuit. These devices are available in several formats CBRAM, DRAM, EEPROM, EERAM, EPROM, Flash, FRAM, NVSRAM, PCM (PRAM), PSRAM, RAM, …