2024年3月26日 · The Fourier transformation infrared (FTIR) spectrum of the SnSe thin film displays vibrational modes of chalcogenides bonds. These results suggest that the developed thin film is crystalline, uniform, and without impurities and …

2021年1月1日 · SnSe is a IV-VI narrow band gap semiconductor and has found enormous device applications owing to its promising properties. Doping impurities into SnSe has shown variations in its properties. This study involves doping of Fe in SnSe with simultaneous substitution of Sb, having general formula Fe 0.05 (SnSe) 1-x Sb x for × = 0, 0.03, 0.05. The ...

2024年7月30日 · Doped metal chalcogenide materials always turned out to be remarkable electrodes for supercapacitors. The fabricated Fe-doped SnSe electrodes show the highest specific capacitance of 1283 F/g at a current density of 5 Ag −1. The large specific capacitance of Fe-doped SnSe electrodes makes them favorable to replace ordinary capacitor electrodes.

2023年3月14日 · In this work, we synthesized polycrystalline SnSe by a simple hydrothermal method using sodium borohydride as a reducing agent for the single phase formation of SnSe nanostructures. X–ray diffraction spectroscopy has been done to confirm the orthorhombic structure and single phase formation.

2024年4月4日 · Concomitantly, zT near room temperature is increased by a factor of more than 10 from the pristine Pnma SnSe to Fmm SnSe alloys. This provides insights into the enhancement of the thermoelectric performance of SnSe and other chalcogenides over a broad temperature range by manipulating the chemical bonds.

2016年6月28日 · Nano powder of SnSe 2 was synthesized using two different surfactants, such as poly-ethelene glycol (PEG) and sodium dodecyl sulphate (SDS) through a simple hydrothermal method. The as-prepared nano powders were confirmed by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), energy dispersive X-ray (EDS).

2024年6月27日 · The FTIR spectrum of SnSe is comprised of absorption bands centered at 665 and 3615 cm −1 which are respectively assigned to the Se–O bond and the O–H bond due to the surface-adsorbed water molecules .

2021年2月1日 · SnSe is a IV-VI narrow band gap semiconductor and has found enormous device applications owing to its promising properties. Doping impurities into SnSe has shown variations in its properties.

Here, we are unraveling its optoelectronics (viz., photodetector and solar cell) potential. Oxidation of the chalcogenides seems to be a boon for tin selenide for its optoelectronic properties. Tin selenide annealed at 300 °C in the open air for different times (0.5, 1, and 1.5 h) shows three consecutive layers (viz. SnSe, SnSe 2, and SnO 2).

2021年11月22日 · The growth mechanism and how metal complexes influence the morphology of SnSe are investigated. As a lithium-ion-battery (LIB) anode, the nanorod structure of SnSe not only provides a fast electron/ion transmission path but also relieves the volume expansion because of the inherent mechanical strength of the one-dimensional structure.