Tunneling processes of ferroelectric tunnel junction (FTJ) based on metal-ferroelectric-insulator-semiconductor (MFIS) stack are studied for both n- and p-type semiconductor electrodes using experimentally calibrated model.

2022年3月31日 · We propose that the asymmetry-induced tunneling electroresistance (TER) effect in a ferroelectric tunnel junction (FTJ) could be improved by integrating a polarization-controlled resonant band....

2023年1月13日 · Ferroelectric tunnel junctions (FTJs) have great potential for application in high-density non-volatile memories. Recently, α -In 2 Se 3 was found to exhibit robust...

The HfO2-based ferroelectric (FE) tunnel junction (FTJ) and its crossbar array are promising for energy-efficient computing. However, its limited ON- current (JON) and ON/OFF tunneling electroresistance (TER) ratio become a bottleneck for large array circuits.

2023年5月4日 · With the essential physics captured, FTJ figure-of-merits (FoMs) are accessed with not only tunneling electroresistance (TER), but also power consumption. Design parameters from FE layer thickness, polarizations, and coercive field to silicon doping and metal work functions are studied, with their impacts on key FTJ FoMs evaluated.

2025年1月1日 · Ferroelectric tunnel junctions (FTJs) based on AlScN ferroelectric material are investigated. A multiscale simulation approach for AlScN FTJs is developed. The results show improved tunnel electroresistance (TER) ratio by using a graphene contact in the FTJ.

2020年7月6日 · In this Article, we report FTJs based on a 2D vdW heterostructure in which CIPS is used as the ferroelectric tunnelling barrier layer and chromium and monolayer graphene (1LG) are used as...

Tunnelling Junctions (FTJs) are promising candidates as highly energy efficient memristors, in fact the polarization switching is an ultra low energy mechanism to enable the...

2024年3月26日 · In FTJ, the low-resistance state (LRS) and high-resistance state (HRS) change based on the polarization direction of the ferroelectric tunneling barrier when an external voltage is applied (figure 2(a)). The unique properties and simple structure of FTJ make it a promising candidate for next-generation memory applications.

2021年8月2日 · We propose energy band engineering to enhance tunneling electroresistance (TER) in ferroelectric tunnel junctions (FTJs). We predict that an ultrathin dielectric layer with a smaller band gap, embedded into a ferroelectric barrier layer, acts as a switch controlling high- and low-conductance states of an FTJ depending on polarization orientation.