2023年5月4日 · With the essential physics captured, FTJ figure-of-merits (FoMs) are accessed with not only tunneling electroresistance (TER), but also power consumption. Design parameters from FE layer thickness, polarizations, and coercive field to silicon doping and metal work functions are studied, with their impacts on key FTJ FoMs evaluated.

2023年7月8日 · Pt/（1.5 nm）HZO/NSTO FTJ具有超大的ON/OFF比，有利于非易失性多态存储，这是高密度集成存储系统最重要的特征之一。 在本研究中，通过施加负向脉冲电压（从0到-8.0 V，间隔为-0.25 V）得到了32个电阻状态（每个单元5 bit）（图5A）。

The ferroelectric tunnel junction (FTJ) is a competitive candidate for post-Moore nonvolatile memories due to its low power consumption and nonvolatility, with its performance being strongly dependent on the conditions for contact between the ferroelectric material and …

2023年7月24日 · A 1500x ILRS/IHRS with a high cell current of ~100 nA/ cell (J = 83 A/cm2) is achieved by antiferroelectric (AFE) vertical ferroelectric tunnel junctions (V-FTJ

2025年1月1日 · Ferroelectric tunnel junctions (FTJs) based on AlScN ferroelectric material are investigated. A multiscale simulation approach for AlScN FTJs is developed. The results show improved tunnel electroresistance (TER) ratio by using a graphene contact in the FTJ.

Ferroelectric tunneling junctions (FTJs) with tunable tunneling electroresistance (TER) are promising for many emerging applications, including non-volatile memories and neurosynaptic computing. One of the key challenges in FTJs is the balance between the polarization value and the tunneling current.

铁电隧道结（FTJ）因其基于超薄铁电体自发极化方向的快速运行及其简单的两端结构而成为当前研究兴趣的主题。 由于FTJ具有非破坏性读出、运算速度快、能耗低和高密度集成等优点，它们最近被认为是非易失性下一代存储器的有希望的候选者。

Hafnia and Zirconia oxide (HZO) based ferroelectric tunnel junction (FTJ) has attracted a lot of attention recently due to its energy-efficient, built-in-select

Ferroelectric Tunnel Junction (FTJ) dd~nnmm dd~μmm Ferroelectric capacitor FTJ advantages: Non-destructive readout: based on measuring the tunneling conductance Good scalability: …

2020年8月5日 · A van der Waals ferroelectric tunnel junction with asymmetric metal and graphene contacts exhibits a high resistance ratio between on and off states, and could be of value in the development of ...