2024年3月31日 · 我们用GM/ID设计方法的时候，都说管子的本征增益由管子的长度L所决定，也就是我们会扫不同L的管子，大致看下哪一个的增益能满足自己的设计需求，很少去关注Vds的设置，但通 ...

2017年10月7日 · Ideally, 𝑔𝑚 should follow slope of Id-Vg curve. At higher Vgs, large transverse electric fields from gate to channel will pull the carriers more closer to oxide-channel interface, which will cause an effective mobility degradation, hence 𝑔𝑚 falls again.

（Vd=Vs+Vds=Vs+ro*gm*Vs= (1+gm*ro)Vs， Vs=1/ (1+gm*ro)Vd） S到d，就是上面推导的common-gate的增益；d到s，就是反方向的common-gate增益。

2010年10月23日 · How can one estimate an acceptable Vov and Vds for a transistor such that Vds >= Vov is satisfied?

2023年4月11日 · 如果想把横坐标换成VGS，也就是不同VDS下器件的跨导随VGS变化的特性，直接Gm=permute (Gm)。 permute的作用是交换自变量的顺序。

If the small-signal voltage is really “small,” then we can neglect everything past the linear term -- where the partial derivative is defined as the transconductance, gm. i

2014年4月7日 · 1. The following hand calculations shows the DC and AC operations of SF. 2. First, get the operation points of the circuit. The threshold voltage of NMOS and PMOS is 1.82V and -2.88V, respectively. The gm of NMOS and PMOS is 18.3mA/V and 10.7mA/V, respectively. Use the simulation model, get the transient of vin, voutn and voutp.

2020年4月11日 · Learn device model and simulator surely. it is a Compact Model based on Verilog-A description. You can extract gm and gds as internal calculation result, if you can understand model equations. Surely learn and understand Custom Waveviewer. Or use functions of ACE (Analysis Command Environment) manually in Custom Waveviewer.

2022年1月14日 · 学习了Chris讲解的gm/id仿真，这里进行一个简单的理论以及仿真过程复述。 当VDS给定时，看一下栅长不同时，截止频率随着Gmid变化的曲线。 可以看出栅长越长，截止频率越低. 栅长越长，本征增益越大。 同样的，电流密度随着栅长的增大而减小。 而对于VDS而言，她对我们电流密度的影响不是很大，所以一般我们取VDD/2。 下面两个图可能一般算零极点的时候才需要看。 文章浏览阅读4.9k次，点赞6次，收藏61次。 学习了Chris讲解的gm/id仿真，这里进 …

I would like to plot Gm vs. Vgs for different value of Vbs. Here is what I did. I performed DC sweep on Vgs and then plotted the drain current vs Vgs and then carried out derivative of ID with respect to VGS using the calculator, i.e derv (IS (drain)) to obtain GM. Then performed a parametric analysis of different values of Vbs.