300 nm GaN XPS spectra and fits of (a) Ga 2p (b) Ga 3d (c) VBM.
Angle-resolved X-ray photoelectron spectroscopy (XPS) is used in this work to experimentally determine the valence band offsets of molecular beam epitaxy...
XPS study of a selective GaN etching process using self-limiting …
2020年5月1日 · In this paper we propose to evaluate the performance of a self-limited GaN etching process using a cyclic etch approach based on O 2 plasma followed by BCl 3 plasma, …
XPS modeling of GaN/GaAs nanostructure grown by the droplet …
2022年12月1日 · X-ray photoelectron spectroscopy (XPS) measurements were performed in situ after all three steps of GaN/GaAs (111)A droplet epitaxy in an ultrahigh vacuum photoelectron …
XPS spectra of all samples. Ga 3d XPS spectra for (a) GaN, (c) GaN…
Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic …
Gallium Spectra – GaN - The International XPS Database 1
XPS Spectra Gallium (Ga) Compounds The XPS Spectra section provides raw and processed survey spectra, chemical state spectra, BE values, FWHM values, and overlays of key …
Detailed XPS scans of N1s, Ga3d and O1s peaks showing
Gallium nitride (GaN) is a wide bandgap semiconductor with remarkable chemical and thermal stability, making it a competitive candidate for a variety of optoelectronic...
Precise determination of surface band bending in Ga-polar n-GaN …
2019年11月18日 · In this paper, Ga-polar n-GaN samples with different Si doping densities have been studied by using ADXPS. Ga 3d core level spectra were evaluated correctly by …
Chemical Visualization of a GaN p-n junction by XPS
2015年9月11日 · We report on an operando XPS investigation of a GaN diode, by recording the Ga2p 3/2 peak position under both forward and reverse bias. Areal maps of the peak positions …
Effects of Mn Ion Implantation on XPS Spectroscopy of GaN
2017年11月29日 · Gallium nitride (GaN) thin film was deposited onto a sapphire substrate and then implanted with 250 keV Mn ions at two different doses of 2 × 10 16 ions/cm 2 and 5 × 10 …
Investigation of metal–GaN and metal–AlGaN contacts by XPS …
2001年9月1日 · In this paper, we report a study of metal–GaN and metal–AlGaN contacts by X-ray photoelectron spectroscopy (XPS) depth profiling as well as I – V and C – V …