2023年6月1日 · Comparison of calculated DOS below 0 eV with XPS experimental data. The phase diagram of the Gd2 S 3 -GdF 3 system has been constructed. The balance equations …

2015年7月8日 · XRPD suggests cubic Th3P4-type structure for obtained Gd2S3 nanoparticles. The size of synthesized nanoparticles is about 86 nm. Optical band gap for these …

1993年12月15日 · 磁性半导体材料 Gd 2 S 3 (=Gd 3- x V x S 4 ，其中 V 表示空位，x = 1/3) 的反射光谱在 2 meV 到 40 eV 的能量范围内在 9, 20 , 77 和 300 K。 从光导率和光电子光谱之间 …

1999年12月1日 · Nanophase γ-Gd 2 S 3 polycrystalline thin films were deposited by a so-called asynchronous pulse ultrasonic spray pyrolysis method on glass substrates at relatively low …

1999年12月1日 · High pressure behavior of γ-Gd2S3 (I43d, Z=4) is studied with X-ray diffraction, Raman spectroscopy, and optical reflectivity. Upon compression to 30 GPa there is no …

2016年5月6日 · Gadolinium sulphide (Gd2S3) is a magnetic semiconductor with large band gap. Gd2S3 was synthesized following chemical and green techniques. Later process provides good...

In this study, Gd2O2SO4:Eu 3+ nanoparticles were synthesized by sol-gel method and were calcined at 950 o C in argon gas atmosphere. In the analysis of the produced nanoparticles …

This paper presents the effect of substrate temperature and oxygen partial pressure on the photoluminescence (PL) intensity of the Gd 2 O 2 S:Tb 3+ thin films that were grown by using …

2018年5月14日 · 通过拉曼光谱法和磁化率法拉第法检查了Gd 3+和S 2−环境的晶格和对称环境的短程扰动，证实了这一观察结果。 因此，由于声子的平均自由程减小，倍半硫化g的热扩散率 …

2023年6月1日 · Comparison of calculated DOS below 0 eV with XPS experimental data. The phase diagram of the Gd 2 S 3 -GdF 3 system has been constructed. The balance equations …