Vertical GeSn nanowire MOSFETs for CMOS beyond silicon
2023年2月25日 · GeSn alloys offer a tunable energy bandgap by varying the Sn content and adjustable band off-sets in epitaxial heterostructures with Ge and SiGe. In fact, a recent report …
Electron Mobility Enhancement in GeSn n-Channel MOSFETs by …
2020年11月27日 · High-quality GeSn films were epitaxially grown by low-temperature chemical vapor deposition. Different strain conditions in the active GeSn layers were achieved by Ge or …
异质集成晶圆键合代工--异质晶圆键合技术和薄膜转移技术——几 …
本文主要介绍了 异质集成晶圆键合技术 的几个主要应用. *通过晶圆键合方法在绝缘体上制备硅基和锗基薄膜. *绝缘体上 GeSn 平台 的制备及其在 FET 中的应用. * 用于将 III-V 和 宽带隙半导 …
The first GeSn FinFET on a novel GeSnOI substrate ... - IEEE Xplore
The world's first GeSn p-FinFETs formed on a novel GeSn-on-insulator (GeSnOI) substrate is reported, with channel lengths Lch down to 50 nm and fin width WFin d
Design and theoretical calculation of novel GeSn fully-depleted …
2018年6月1日 · In this paper, a novel fully-depleted Ge 1-x Sn x n-Tunneling FET (FD Ge 1-x Sn x nTFET) with field plate is investigated theoretically based on the experiment previously …
Enhancing Device Performance with High Electron Mobility GeSn …
2024年8月22日 · In this work, we address the previously mentioned challenges by analyzing and comparing the performance of vertical gate-all-around (GAA) nanowire (NW) n -type …
具有量子限制模型的新型 GeSn 全耗尽 n 隧道 FET 的设计和理论计 …
摘要 在本文中，基于先前发表的实验，从理论上研究了一种具有场板的新型全耗尽Ge1-xSnx n-Tunneling FET（FD Ge1-xSnx nTFET）。 Ge1-xSnx 的能带结构由 EMP 计算，Ge1-xSnx 的 …
Improved Performance in GeSn/SiGeSn TFET by Hetero-Line …
2019年3月4日 · Vertical tunneling FET utilizing hetero-line architecture with GeSn/SiGeSn staggered tunneling junction (TJ) is designed and theoretically characterized. Utilizing vertical …
高迁移率Ge和GeSn MOSFET - Semi
Ge和GeSn具有比Si高得多的载流子迁移率，与Si相同的晶体结构也使得它们容易与传统Si基制造平台兼容。 针对高迁移率Ge、GeSn器件关键技术， 西安电子科技大学微电子学院韩根全教 …
Vertical GeSn nanowire MOSFETs for CMOS beyond silicon
Here, we present high performance, vertical nanowire gate-all-around FETs based on the GeSn-material system grown on Si. While the p-FET transconductance is increased to 850 µS/µm by …