半导体器件——GIDL篇 - 知乎 - 知乎专栏
Application in NAND： GIDL erase， 3D NAND中， Pwell erase 需结合SEG工艺，工艺复杂，因此越来越多的制造商开始使用GIDL erase，即利用GIDL效应产生电子空穴对，将空穴扫入channel中，实现块擦除。 Definition: Gate Induced Drain Leakage; 以NMOS为例，当gate不加压或加负压，drain端加高电压, 使得gate和drain的交叠区域出现了一个从drain指向gate的强电场，靠近gate oxide 附近出现强耗尽区，形成电势变化非…
EDA探索丨第7期：GIDL：DIBL的远房兄弟 - 知乎 - 知乎专栏
所谓gidl，实际上是晶体管在截止时的一种漏电机制。 以NMOS为例，其发生在漏端高电压，栅极零电压或者负电压的状态。 这种状态实际上MOS的电流应该处于Ioff的状态。
GIDL effect observed in FinFET shapes and Vt implant energy
Due to the process controllability, especially in photo-lithography, the multi-channel shape to promote the drive current seems not easy to be controlled well and deteriorates the desired target. The GIDL effect coming from the lower V t implant energy is more distinct than at the higher with the multi-channel FinFETs. However, this phenomenon ...
GIDL analysis of the process variation effect in gate-all-around ...
2018年2月1日 · In this paper, the gate-induced drain leakage (GIDL) is analyzed on gate-all-around (GAA) Nanowire FET (NW FET) with ellipse-shaped channel induced by process variation effect (PVE). The fabrication process of nanowire can lead to change the shape of channel cross section from circle to ellipse.
Physical Insights Into the Nature of Gate-Induced Drain Leakage …
2017年4月4日 · We discuss in detail the difference in the nature of GIDL, i.e., drain current dependence on the negative gate voltage (VGS ≤ 0 V) for different NW FET configurations. Furthermore, we show that the parasitic BJT action is significant in NW junctionless accumulation mode FET (JAMFET) and NW MOSFET in the OFF-state and diminishes as the gate ...
GIDL - 百度百科
GIDL (gate-induced drain leakage) 是指栅诱导漏极 泄漏电流，对 MOSFET 的可靠性影响较大。 MOSFET 中引发 静态功耗 的泄漏电流主要有：源到漏的亚阈泄漏电流，栅泄漏电流，发生在 栅漏 交叠区的栅致漏极泄漏 GIDL 电流，如图下图所示。 在这些泄漏电流中，在电路中器件处于关态或者处于等待状态时，GIDL 电流在泄漏电流中占主导地位。 当栅漏交叠区处栅漏电压 VDG很大时，交叠区界面附近硅中电子在 价带 和 导带 之间发生带带隧穿形成电流，我们把这种电流称之 …
GIDL in Doped and Undoped FinFET Devices for Low-Leakage …
2012年11月26日 · Investigation of gate-induced drain leakage (GIDL) in thick-oxide dual-gate doped- and undoped-channel FinFET devices through 3-D process and device simulations is presented.
GIDL (Gate Induced Drain Leakage) current model for advanced MOS-FETs is proposed and implemented into HiSIM2, complete surface potential based MOSFET model. The model considers two tunneling mechanisms, the band-to-band tunneling and the trap assisted tunneling. Totally 7 model pa-rameters are introduced.
It is very significant to study the GIDL current (IGIDL) in negative capacitance-based FETs as the additional ferroelectric layer afects the electric field as well as band-to-band tunneling. This article proposed an analytical model for GIDL current in negative capacitance junctionless FinFET (NC-JL …
Modeling and analysis of gate-induced drain leakage current
2022年8月16日 · It is very significant to study the GIDL current (IGIDL) in negative capacitance-based FETs as the additional ferroelectric layer affects the electric field as well as band-to-band tunneling. This article proposed an analytical model for GIDL current in negative capacitance junctionless FinFET (NC-JL FinFET).