A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET).

氮化镓 高电子迁移率晶体管GaN HEMT(High Electron Mobility Transistors)作为 宽禁带 (WBG)功率半导体器件的代表，器件在高频功率应用方面有巨大的潜力。 GaN材料相比于 Si 和SiC 具有更高的 电子迁移率 、 饱和电子速度 和 击穿电场 ，如图1所示。

高电子迁移率晶体管（英语：High electron mobility transistor, HEMT），也称调制掺杂场效应管（modulation-doped FET, MODFET）是场效应晶体管的一种，它使用两种具有不同能隙的材料形成异质结，为载流子提供沟道，而不像金属氧化物半导体场效应管那样，直接使用掺杂的 ...

GaN HEMT代表高电子迁移率晶体管（High Electron Mobility Transistor），它利用氮化镓材料的高电子迁移率来实现高速、高功率、高效率的操作。 它具有低电阻和高开关速度的特点，常用于射频功率放大器、交流变换器、DC-DC转换器和电源管理等应用中。

Oct 27, 2024 · 氮化镓高电子迁移率晶体管（GaN HEMT）是一种基于氮化镓（GaN）材料的高 性能 场效应晶体管。 GaN HEMT因其独特的物理和电气特性，在高频、高功率和高温应用中表现出色。 在拆解GaN HEMT时，我遇到的最大的困惑是：我感觉 SiC MOSFET的性能已经很不错了，和硅比起来，又耐温又耐压导通电阻还小还支持高频，那我们到底 为什么还要整出个GaN HEMT 来？ 总不能是闲得慌吧。

May 29, 2021 · hemt是第一个在两种具有不同能隙的半导体材料之间结合界面的晶体管。hemt由于其高迁移率的沟道载流子而被证明优于以前的晶体管技术，从而具有高速和高频性能。

The HEMT or High Electron Mobility Transistor is a type of field effect transistor (FET), that is used to offer a combination of low noise figure and very high levels of performance at microwave frequencies. This is an important device for high speed, high frequency, digital circuits and microwave circuits with low noise applications.

L. Aucoin GaAs-based high-electron mobility transistors (HEMTs) and pseudomorphic HEMT (or PHEMTs) are rapidly replacing conventional MESFET technology in military and commercial applications requiring low noise figures and high gain, particularly at millimeter-wave frequencies.

Jun 7, 2017 · HEMT devices are competing with and replacing traditional field‐effect transistors (FETs) with excellent performance at high frequency, improved power density and satisfactory efficiency. This chapter provides readers with an overview of the performance of some popular and mostly used HEMT devices.

HEMT stands for High Electron Mobility Transistor. A HEMT is a type of transistor that uses semiconductor materials with high electron mobility, allowing for high-speed switching (high-frequency operation). Si MOSFETs utilize a vertical structure, whereas GaN HEMTs adopt a lateral structure.