HBM3 PPA Performance Evaluation by TSV Model with Micro-Bump …
In this paper, through-silicon via (TSV) circuit models for the third generation of high bandwidth memory (HBM3) are developed utilizing 3D IC stacking technology with micro-bump or hybrid …
先进封装技术之争 | 凸块（Bumping）间距推进至10μm以下，推 …
Bumping/μBumping，（微）凸块制造技术是倒装等发展演化的基础工程，并延伸演化出 TSV 、 WLP 、 2.5D/3D 、 MEMS 等封装结构与工艺，广泛应用于5G、人工智能、云计算、可穿戴电 …
Abstract—In this paper, through-silicon via (TSV) circuit models for the third generation of high bandwidth memory (HBM3) are developed utilizing 3D IC stacking technology with micro …
What is High Bandwidth Memory 3 (HBM3)? - Synopsys
High Bandwidth Memory 3 (HBM3) is a memory standard (JESD238) for 3D stacked synchronous dynamic random access memory (SDRAM) released by JEDEC in January 2022, offering …
Silicon Interposer (2.5D) is the incumbent technology of choice. Potentially lower cost, fine pitch interconnect wafer-level and substrate based technologies are emerging .
堆叠互联：专用设备HBM技术核心 - 知乎 - 知乎专栏
HBM通过使用堆叠内存芯片以及硅通孔（Through-Silicon Via,TSV）技术与微凸点（Microbump）互连来实现更高的带宽和更低的功耗，从而解决传统内存技术在处理高性能计 …
Analysis and Optimization of HBM3 PPA for TSV Model With Micro-Bump …
Abstract: This article investigates the performance of the proposed through-silicon via (TSV) with micro-bump and hybrid bonding techniques in the third generation of high-bandwidth memory …
HBM3: Big Impact On Chip Design - Semiconductor Engineering
2021年10月14日 · HBM3 will bring a 2X bump in bandwidth and capacity per stack, as well as some other benefits. What was once considered a “slow and wide” memory technology to …
Bumps Requirement • Array size – 6022µm x 2832µm • Test requirement – 2.133 Gb/s Functional test of the stack – All 8 device channels • HBM Array Structure – Total TSV Micro Bumps: …
HBM3来了！ - 电子工程专辑 EE Times China
2021年10月29日 · 合理利用HBM3带宽需要一个具有高带宽片上网络和处理元素的处理器设计，通过提高内存级并行性来使数据速率最大化。 人工智能训练芯片通常需要处理万亿字节的原始 …