2022年9月1日 · Hafnium oxide (HfOx) is being investigated as a new candidate for the passivation layer of silicon solar cells due to its excellent electrical and optical properties, such as high dielectric constant, large band gap, refractive index, high transparency, and thermodynamic stability in contact with Si.

2023年11月1日 · In order to detect the successful incorporation of nitrogen atoms in the lattice of HfOx films, we have done X-Ray photoelectron spectroscopy (XPS) technique. Fig. 3 a and 3b show the XPS profiles of pristine HfOx films with fitted peaks whereas the XPS profiles of the N-doped HfOx films with fitted peaks is given in Supplementary Data Fig S3 .

2021年12月6日 · The growth of HfOx films from the metal precursor tetrakis(ethylmethylamino) hafnium with La(NO3)3·6H2O solution (LNS) as an oxidant was investigated. The atomic layer deposition (ALD) conditions were optimized, and the chemical state, surface morphology, and microstructure of the prepared films were characterized.

2021年1月1日 · In the present study, we demonstrate the importance of ALD temperature window and its impact on the quality of HfOx/Si interface using X-ray photoelectron spectroscopy (XPS), Variable angle spectroscopy ellipsometry (VASE) and Capacitance-voltage (C-V) measurements.

We have used transmission electron microscopy, high-resolution Rutherford backscattering spectrometry (HRBS), and angle-resolved X-ray photoelectron spectroscopy (ARXPS) to investigate the...

2018年6月12日 · The effect of different growth conditions on the structure and optical characteristics of deposited HfO2 film has been studied using X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), grazing incidence X-ray diffraction (GIXRD) and variable angle spectroscopic ellipsometry (VASE).

The deposition process was monitored by in situ XPS and the as-deposited structure and chemical bonding were examined by TEM and XPS. The in situ XPS measurement showed the presence of a...

Hafnium oxide films of different thickness and methods of production were analyzed using XPS, AES, Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS), and Q-SIMS. Depth profiling conditions were varied to evaluate the effect of changes in …

2022年5月29日 · In this paper, we present a superlattice-like (SLL) switching layer design to achieve a high-performance analog-type memristor with high conductance modulation linearity, fast operation speed, long-term data retention, and CMOS process compatibility.

2009年6月15日 · Hafnium (IV) oxide thin films were synthesized by atomic layer deposition (ALD) on Si (100) substrates, using an innovative guanidinate-stabilized hafnium amide precursor, [Hf (NEtMe) 2 (EtMeNC (N Pr) 2) 2]. In the present work, our attention is focused on a detailed XPS characterization of a representative HfO 2 coating grown at 350 °C.