We have carried out a detailed experimental study of the switching dynamics of HfZrO2 Metal-Ferroelectric-Metal (MFM) and Metal-Ferroelectric-Insulator-Metal (M

2020年12月12日 · Herein, an outstandingly reliable and high-speed antiferroelectric HfZrO tunnel junction (AFTJ) is probed to understand whether it is a promising candidate for next-generation nonvolatile memory applications. High-reliability AFTJ can be explained by less charge injection due to the low depolarized field.

2022年4月6日 · Here we report HfO 2 –ZrO 2 superlattice heterostructures as a gate stack, stabilized with mixed ferroelectric–antiferroelectric order, directly integrated onto Si transistors, and scaled down to...

The capping metal plays an important role on HfZrO2 (HZO) crystallization for ferroelectric phase. The Mo top electrode MIM capacitor is demonstrated with high

2020年8月31日 · Abstract: Atomic layer deposition (ALD)-based TiN electrode on ferroelectric HfZrO 2 metal/ferroelectric/metal (MFM) capacitor and ferroelectric field-effect transistor (FeFET) is demonstrated experimentally with weight transfer, that is, ΔP , per pulse analysis through consecutive alternating potentiation/depression (Pot./Dep.) training pulses.

HfO 2 -based ferroelectric (FE) materials have emerged as a promising material for non-volatile memory applications because of remanent polarization, scalability of thickness below 10 nm, and compatibility with complementary metal–oxide–semiconductor technology.

2023年12月15日 · AlGaN/GaN HEMT heterostructures grown by metal-organic chemical vapor deposition are augmented with a FE gate stack comprising atomic layer deposition-grown HfZrO 2. In addition, highly doped regrown source and drain Ohmic contacts are integrated into an improved fabrication process flow.

2018年9月28日 · Ferroelectricity in HfO 2 -based materials, especially Hf 0.5 Zr 0.5 O 2 (HZO), is today one of the most attractive topics because of its wide range of applications in ferroelectric random-access memory, ferroelectric field-effect transistors, ferroelectric tunneling junctions, steep-slope devices, and synaptic devices.

2019年7月15日 · The ferroelectric HfZrO 2 (HZO) is focused on coercive voltage for onset of negative capacitance (NC) with sub-2.3 kb T/q subthreshold swing (SS). The Fe-FETs with ultra-thin HZO (<10 nm) is experimentally obtained gradual transition on SS and V T shift on annealing temperatures and sweep ranges.

2022年12月23日 · In this paper, we present a broadband microwave characterization of ferroelectric hafnium zirconium oxide (Hf) metal–ferroelectric–metal (MFM) thin film varactor from 1 kHz up to 0.11 THz. The varactor is integrated into the back-end-of-line (BEoL) of 180 nm CMOS technology as a shunting capacitor for the coplanar waveguide (CPW) transmission line.