2024年12月5日 · In this article, we have designed an optimized ferroelectric tunnel junction (FTJ) device structure that inserts 3-nm Al2O3 between Hf0.5Zr0.5O2 (HZO) films. The Al2O3 interlayer can block the longitudinal growth of HZO grains and increase the number of ferroelectric domains.

2023年5月4日 · With the essential physics captured, FTJ figure-of-merits (FoMs) are accessed with not only tunneling electroresistance (TER), but also power consumption. Design parameters from FE layer thickness, polarizations, and coercive field to silicon doping and metal work functions are studied, with their impacts on key FTJ FoMs evaluated.

2020年3月18日 · In this work, we constructed the high-performance MFS-type FTJ memristors based on Ag/BaTiO 3 (BTO)/Nb:SrTiO 3 (NSTO) heterojunctions, and achieved stable non-volatile resistance switchings with...

The Hf0.5Zr0.5O2-based ferroelectric tunnel junction (FTJ) devices are fabricated and further enhanced by a proposed “thermal rewake-up” (TR) operation at diffe

2015年7月28日 · In this report, we demonstrate ferroelectric tunnel junctions (Pt/BaTiO 3 /La 0.67 Sr 0.33 MnO 3) epitaxially grown on silicon substrates. X-ray diffraction spectra and high resolution transmission...

2020年7月6日 · In this Article, we report FTJs based on a 2D vdW heterostructure in which CIPS is used as the ferroelectric tunnelling barrier layer and chromium and monolayer graphene (1LG) are used as...

2022年1月1日 · Here, we report a flexible FTJ memristor grown on a mica substrate, which consists of an ultrathin ferroelectric barrier of BiFeO 3, a semiconducting layer of ZnO, and an electrode of SrRuO 3. The obtained flexible FTJ memristor exhibits stable voltage-tuned multi-states, and the resistive switchings are robust after 10 3 bending cycles. The ...

2022年5月23日 · Ferroelectric tunnel junction (FTJ) is one promising candidate for next-generation nonvolatile data storage and neural network computing systems. In this work, the high-performance 50 nm-diameter Au/Ti/PbZr 0.52 Ti 0.48 O 3 (∼3 nm, (111)-oriented)/Nb:SrTiO 3 (Nb: 0.7 wt %) FTJs are achieved to demonstrate the scaling down capability of FTJ.

铪基ftj具有出色的多级电阻调制能力，进一步模拟了在人工突触方面的应用。 LTP和LTD的最小非线性值分别为2.28和2.38（图5D）。 基于可重复的电导率随脉冲数的变化（图5E），把FTJ用于模拟识别MNIST数据库。

Ferroelectric tunnel junction (FTJ) with ultrathin 3 nm-thick Hf 0.5 Zr 0.5 O 2 (HZO) is investigated. The high current density up to 100 A/cm 2 is at least 10 times higher than that in previously reported HZO FTJs. It is suitable for future nanoscale FTJ with a GΩ cell resistance for the application of in-memory computing.