200V Single N-Channel MOSFET in a TO-220 package.

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRF640NSTRLPBF – N-Channel 200 V 18A (Tc) 150W (Tc) Surface Mount D2PAK from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

View IRF640N (S,L)PbF by Infineon Technologies datasheet for technical specifications, dimensions and more at DigiKey.

It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

Description: N-Channel Power MOSFETs 200V, 18A, 0.15ohm. Manufacturer: Fairchild Semiconductor.

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRF640N Transistor Datasheet, IRF640N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that. IRF640N Description.