Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO …
IRFZ44NPBF_Infineon (英飞凌)_IRFZ44NPBF中文资料_PDF手册_价 …
下载IRFZ44NPBF中文资料、引脚图、Datasheet数据手册，有场效应管 (MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。
IRFZ44 Datasheet (PDF) - NXP Semiconductors
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral …
IRFZ44N - Infineon Technologies
55 V Single N-Channel Power MOSFET in a TO-220 package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to …
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRFZ44 MOSFETs | Vishay
IRFZ44 PRODUCT INFORMATION. Power MOSFET. FEATURES. Dynamic dV/dt rating. 175 °C operating temperature. Fast switching. Datasheet. Request Sample. Buy Now. Disclaimer: …
IRFZ44NPBF Infineon Technologies | Mouser 臺灣
IRFZ44NPBF Infineon Technologies MOSFET MOSFT 55V 49A 17.5mOhm 42nC 資料表、庫存和定價。
IRFZ44N参数_N沟道MOS管芯片中文资料_International Rectifier
IRFZ44N International Rectifier N沟道MOS管芯片中文资料PDF, 共 (9)页, IRFZ44N数据手册有芯片封装TO-220和参数资料。
IRFZ44NPBF中文资料_PDF数据手册_参数_引脚图_图片-立创商城
IRFZ44NPBF是N沟道HEXFET®功率MOSFET，每硅面积具有极低的导通电阻和快速开关性能。 这一优势与HEXFET功率MOSFET众所周知的快速开关速度和坚固耐用的器件设计相结合，为 …
IRFZ44V - Infineon Technologies
IR MOSFET™ N-channel ; TO-220 package; 16.5 mOhm; Planar cell structure for wide SOA; Optimized for broadest availability from distribution partners