The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, …

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

2019年4月18日 · The IRFZ44N is a N-channel MOSFET with a high drain current of 49A and low Rds value of 17.5 mΩ. It also has a low threshold voltage of 4V at which the MOSFET will start …

Description: N-channel enhancement mode TrenchMOS transistor. Manufacturer: NXP Semiconductors.

The IRFZ44N is a powerful MOSFET transistor that can be used in a variety of applications. This article provides an overview of the IRFZ44N, including its features, applications, pin …

2022年12月19日 · The IRFZ44N is a voltage-controlled variable N-channel Power MOSFET available in the TO-220 package in enhancement mode. It is used to produce very low …

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device featuresverylowon-stateresistance and has integral …

2020年10月18日 · IRFZ44N is a widely used MOSFET transistor designed to use in variety of general purpose applications. The transistor possesses high speed switching capability which …

View IRFZ44N by NXP USA Inc. datasheet for technical specifications, dimensions and more at DigiKey.

IRFZ44NPBF – N-Channel 55 V 49A (Tc) 94W (Tc) Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key …