2017年4月7日 · Using first-principles density-function theory (DFT) calculations, we reveal that the ground state structures of an intrinsic prototypical In 2 Se 3 quintuple layer (QL) possess both …

(a, b) 单层In2Se3的两个极化态，分别称为FE1和FE2。 P表示极化，箭头表示其方向。 (c, d) 分别为无自旋轨道耦合和有自旋轨道耦合的能带结构。 (e, f) 费米能级分别在EF1和EF2的单 …

2022年10月21日 · We achieve reversible AFE and out-of-plane FE phase transition in 2D In 2 Se 3 by delicate strain control inside a transmission electron microscope. In addition, the …

2022年12月12日 · Two-dimensional (2D) ferroelectric (FE) semiconductors with switchable polarization provide a versatile platform for novel applications, such as ferroelectric field-effect …

2021年11月2日 · Two-dimensional (2D) ferroelectric In 2 Se 3 with rarely discovered out-of-plane polarization has great potentials in advanced electronic and electromechanical applications.

2019年11月18日 · Our first-principles calculation based on the density-functional theory predicts a magnetic moment of 5 µB per Fe atom when Fe substitutes In sites in In2Se3. The theoretical …

2023年9月12日 · We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe 3-x GeTe …

2025年1月22日 · 铁电极化的非易失性特性为铁电场效应晶体管 （FeFET） 提供了一种实现可调谐 n 型和 p 型导电通道的创新方法。 此外，面内双轴应变调制成功地调制了 α-In2Se3/α-Ga2Se3 …

2023年3月31日 · Our results show significant potential to harness the switchable polarization in partially overlapping α-In 2 Se 3 –MoS 2 based FeFETs to engineer multimodal, nonvolatile …

Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D …