2025年1月15日 · An XPS intensity model based on In4d and Ga3d core levels enables the estimation of the gallium/indium ratio within the droplets under the assumption of a homogeneous droplet. On the other hand, we develop a brand new decomposition methodology of loss probabilities curves obtained from REELS spectra for droplets deposited on a substrate.

Indium phosphide (InP) surfaces are greatly affected by ionic bombardment. We investigate the resulting surface perturbation through the use of the complementary analytical techniques of...

铟•其它金属 铟元素 XPS 主峰： In3d 干扰峰： 不适用 常见化学状态的结合能：

Indium元素的电子配置和X射线光电子谱等详细信息，都是XPS元素参考表的一部分。 赛默飞科技提供全面的元素分析解决方案，帮助您准确理解和应用Indium元素。

2015年8月30日 · In this paper, we examine the complementarity of Glow Discharge Optical Emission Spectroscopy (GD-OES) and X Ray Photoelectron Spectroscopy (XPS) for the realization of fine chemical depth profiling of photovoltaic absorbers using Cu (In,Ga)Se 2 (CIGS) materials. The possibility to use sequentially these two techniques is discussed in this paper.

N-CQDs coupled with irregular square shaped InNbO4 was confirmed by XRD, FTIR, TEM and XPS. The as-prepared N-CQDs/InNbO4 composites displayed stronger visible-light absorption from 400 nm to 800...

基于 In4d 和 Ga3d 核心水平的 XPS 强度模型能够在均匀液滴的假设下估计液滴内的镓/铟比率。 另一方面，我们开发了一种全新的分解方法，即从沉积在衬底上的液滴的 REELS 光谱中获得的损失概率曲线。

X-ray photoelectron spectroscopy (XPS or ESCA) curve fitting procedures, reference materials and useful notes are listed here to provide a starting point for the consistent interpretation of XPS spectra. These reference pages contain tips and techniques that are designed to help both the novice and advanced XPS user.

The XPS spectra shown in Fig. 2 (a) depict the full range scanned from 0 to 1200 eV. Peaks such as C, O1s, Si, In3p, In3d, In4s, In4p , and In4d were detected.

2018年8月1日 · Using XPS (x-ray photoelectron spectroscopy) measurements sessions combined with Ar + ion sputtering it is expected to obtain a clear image on chemical composition and interdiffusion processes in InGeNi ohmic layer and at metal/GaAs (SI) interface.