High-resolution XPS spectra of (a) In 3d and (b) N 1s peaks of InN ...
Indium nitride (InN) is a low bandgap, high electron mobility semiconductor material of interest to optoelectronics and telecommunication. Such applications require the...
Photoelectron spectroscopic investigation of InN and InN/GaN ...
2008年6月2日 · The surface band diagram of InN and band structure of the InN/GaN interface were studied using ultraviolet photoemissive yield spectroscopy and X-ray photoemission spectroscopy (XPS). The surface work function and the difference between the Fermi level and the conduction band minimum of InN were determined by ultraviolet photoemissive yield ...
The International XPS Database of Monochromatic XPS Reference …
The International XPS Database provides - XPS survey spectra, XPS peak-fitted spectra, XPS valence band spectra, plasmon spectra, and six (6) tables of BEs.
Indium Spectra – InN – The International XPS Database 1
XPS Spectra Indium (In) Compounds The XPS Spectra section provides raw and processed survey spectra, chemical state spectra, BE values, FWHM values, and overlays of key spectra. Atom% values from surveys are based on sample, as received, and Scofield cross-sections. Atom% values are corrected for IMFP and PE.
XPS spectra of (a) In3d and (b) N1s of InN ... - ResearchGate
Thin films with GaN, InN, InNxOy, and In2O3 bonds were detected from X-ray photoelectron spectroscopy (XPS) measurements.
Molecular beam epitaxy growth of high mobility InN film for high ...
2022年4月1日 · The InN/GaN junction may exhibit exceptional optoelectronic properties due to spontaneous and piezoelectric polarization at the interface. In this work, we fabricated high quality InN/GaN heterointerface with high electron mobility and incorporate it for high-performance broadband photodetector with a simple InN/GaN heterostructure.
In 3d5/2 Core level XPS spectra for a InN and e InN
In situ X-ray photoelectron spectroscopy measurements were performed on the ZnMgO nanorods, the interface of ZnMgO/InN and the InN core-shell nanorods to fully understand the structure and...
Angle-resolved XPS measurements of GaN and InN grown by RF …
Abstract: The surface band bending was investigated by angle-resolved XPS measurements in both metal-polar and N-polar GaN and InN films grown by RF-MBE. Clear difference on the bending direction was observed between GaN and InN films.
铟 | Thermo Fisher Scientific - CN
XPS 光谱解读. In3d 区域具有明显的自旋轨道分裂峰 (Δ 金属 =7.6 eV)。 金属峰形不对称。 在铟金属的 3d 3/2 自旋轨道分裂峰的较高结合能一侧观察到能量损失特征峰。
Nitrogen Spectra – InN – The International XPS Database 1
The XPS Spectra section provides raw and processed survey spectra, chemical state spectra, BE values, FWHM values, and overlays of key spectra. Atom% values from surveys are based on sample, as received, and Scofield cross-sections. Atom% values are corrected for IMFP and PE. Peak-fits are guides for practical, real-world applications.
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