用分立器件的管心集成称为混合集成oeic模块；把光和电的元器件做在同一块半导体基片（如gaas或inp）上，称单片集成oeic组件。oeic是集成光电子学系统的核心部件。20世纪90年代初混合集成较成熟，已有产品，单片集成尚属探索研制阶段，它代表未来的发展方向。

2021年3月1日 · 硅基光电集成（oeic），即在硅的衬底上，实现光子的传输。 其分为单片集成和混合集成。 目前，光波复用/解复用、光波长调谐和变换等器件已可实现单芯片集成，而光模块需要混合集成。

OEIC的成功在很大程度上取決於所用材料和工藝，目前研究最多的材料是GaAs和InP。 這些材料不僅具有良好的電光特性，既可用於製作光電器件，又可用於製作高速電子電路。

摘要：采用InP／InGaAsHBT与PIN光探测器单片集成方案，对光接收光电集成电路(0EIC)的外延材料结构和 生长、电路设计、制作工艺和性能测试进行了研究．基于自对准InP／InGaAsHBT工艺，实现了1．55pm波长单片

Abstract: Monolithic integration of photonic devices such as lasers, modulators, and photodetectors, along with their associated electronic circuitry, has recently made significant advances such that high performance is now being achieved in devices using both the GaAs and InP materials systems.

1990年5月3日 · The requirements of InP opto-electronic ICs (OEIC) are discussed, and the progress being made in meeting these requirements is reviewed. Advantages and problems associated with the integration of OEIC elemental devices (e.g. laser diodes, photodetectors, and transistors) are discussed.

摘 要: 总结了InP 基单片集成高速光接收机的主要集成形式,分析了各种集成方式的优缺 点,重点总结了最具发展潜力的PIN2HEMT 光接收机的研究与进展,最后指出单片集成光接收机

2019年6月1日 · This work is concerned with the design, characterisation and modelling of high-speed InP/InGaAs PIN–SHBT-based OEIC photoreceivers. More importantly, full-scale characterisations of the receivers using CAD tools prior to the fabricated circuits are invaluable in the prediction of prospective performances and to aid in further optimisations.

2018年1月1日 · IMOS (InP membrane on silicon) is a platform-based approach to create indium phosphide (InP) nanophotonic integrated circuits. It uses monolithic integration of all photonic functions in the InP layers to leverage the most efficient optoelectronic processes and to remove optical interfaces between separately grown wafers.

Abstract: An InP-based photoreceiver OEIC for /spl lambda/=1.55 /spl mu/m with a bandwidth of 27 GHz is reported. The receiver design, fabrication and characterization is presented. The device consists of an optical waveguide-fed pin-photodiode and a coplanar traveling-wave amplifier being composed of four GaInAs-AlInAs-InP-HEMT's.